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Author Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T url  doi
openurl 
  Title Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal <ef><bf><bc>Appl. Phys. Lett.  
  Volume 104 Issue (down) Pages 052605(1-4)  
  Keywords NbN HEB mixers, local oscillator power, RF nonuniform absorption  
  Abstract We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.  
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  Notes Approved no  
  Call Number Serial 935  
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Author Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. url  doi
openurl 
  Title Electron heating in metallic resistors at sub-Kelvin temperature Type Journal Article
  Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 76 Issue (down) Pages 165426(1-9)  
  Keywords electron heating in resistor, HEB distributed model, HEB model, hot electrons  
  Abstract In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.  
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  Notes Recommended by Klapwijk as example for writing the article on the HEB model. Approved no  
  Call Number Serial 936  
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Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. url  openurl
  Title Superconductive NbN hot-electron bolometric mixer performance at 250 GHz Type Conference Article
  Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.  
  Volume Issue (down) Pages 331-336  
  Keywords NbN HEB mixers  
  Abstract Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 945  
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Author Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. openurl 
  Title A microwave reflection readout scheme for hot electron bolometric direct detector Type Journal Article
  Year 2015 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.  
  Volume 5 Issue (down) Pages 81-84  
  Keywords HEB detectors  
  Abstract In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout

scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
 
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 950  
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Author Maslennikov, S. url  openurl
  Title RF heating efficiency of the terahertz superconducting hot-electron bolometer Type Journal Article
  Year 2014 Publication arXiv Abbreviated Journal arXiv  
  Volume 1404.5276 Issue (down) Pages 1-4  
  Keywords superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method  
  Abstract We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values  
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 954  
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Author Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. url  doi
openurl 
  Title Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer Type Journal Article
  Year 2012 Publication Phys. Procedia Abbreviated Journal Phys. Procedia  
  Volume 36 Issue (down) Pages 334-337  
  Keywords NbN HEB mixer  
  Abstract We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1875-3892 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1381  
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Author Palma, F.; Teppe, F.; Fatimy, A. E.; Green, R.; Xu, J.; Vachontin, Y.; Tredicucci, A.; Goltsman, G.; Knap, W. url  doi
openurl 
  Title THz communication system based on a THz quantum cascade laser and a hot electron bolometer Type Conference Article
  Year 2010 Publication 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves Abbreviated Journal 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves  
  Volume Issue (down) Pages 11623798 (1 to 2)  
  Keywords QCL, HEB detector  
  Abstract We present the experimental study of the direct emission – detection system based on the THz Quantum Cascade Laser as a source and Hot Electron Bolometer (HEB) detector – in view of its application as an optical communication system. We show that the system can efficiently transmit the QCL Terahertz pulses. We estimate the maximal modulation speed of the system to be about several GHz and show that it is limited only by the QCL pulse power supply, detector amplifier and connection line/wires parameters.  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1391  
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Author Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. openurl 
  Title Superconducting diamond films as perspective material for direct THz detectors Type Abstract
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue (down) Pages 82  
  Keywords KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP  
  Abstract Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.  
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  Notes Approved no  
  Call Number Serial 1173  
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Author Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. url  isbn
openurl 
  Title Ultrafast superconducting bolometer receivers for terahertz applications Type Abstract
  Year 2009 Publication Proc. PIERS Abbreviated Journal Proc. PIERS  
  Volume Issue (down) Pages 867  
  Keywords HEB  
  Abstract The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.  
  Address Moscow, Russia  
  Corporate Author Thesis  
  Publisher The Electromagnetics Academy Place of Publication 777 Concord Avenue, Suite 207 Cambridge, MA 02138 Editor  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1559-9450 ISBN 978-1-934142-09-7 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ sasha @ ozhegovultrafast Serial 1022  
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Author Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Gol'tsman, G. N. url  doi
openurl 
  Title Infrared and terahertz detectors on basis of superconducting nanostructures Type Conference Article
  Year 2010 Publication Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. Abbreviated Journal  
  Volume Issue (down) Pages 823-824  
  Keywords SSPD, SNSPD, HEB  
  Abstract Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor IEEE  
  Language Summary Language Original Title  
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  Notes Approved no  
  Call Number RPLAB @ sasha @ smirnov2010infrared Serial 1025  
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