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Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. |
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Title |
Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range |
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Journal Article |
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2003 |
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IEEE Microw. Wireless Compon. Lett. |
Abbreviated Journal |
IEEE Microw. Wireless Compon. Lett. |
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Volume |
13 |
Issue  |
11 |
Pages |
493-495 |
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Keywords |
waveguide NbN HEB mixers |
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Abstract |
We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz. |
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1531-1309 |
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1509 |
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Author |
Rönnung, F.; Cherednichenko, S.; Winkler, D.; Gol'tsman, G. N. |
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Title |
A nanoscale YBCO mixer optically coupled with a bow tie antenna |
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Journal Article |
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1999 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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12 |
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11 |
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853-855 |
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YBCO HTS HEB mixers |
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The bolometric response of YBa2Cu3O7-δ(YBCO) hot-electron bolometers (HEBs) to near-infrared radiation was studied. Devices were fabricated from a 50 nm thick film and had in-plane areas of 10 × 10 µm2, 2 × 0.2 µm2, 1 × 0.2µm2 and 0.5 × 0.2 µm2. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one. |
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0953-2048 |
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1563 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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2007 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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101 |
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12 |
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124508 (1 to 6) |
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Keywords |
HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
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Title |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
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2010 |
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Tech. Phys. Lett. |
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Tech. Phys. Lett. |
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Volume |
36 |
Issue |
12 |
Pages |
1103-1105 |
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Keywords |
NbN HEB mixer |
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Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. |
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1063-7850 |
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1389 |
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Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G. |
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Title |
Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers |
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1998 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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72 |
Issue |
12 |
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1516-1518 |
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Keywords |
HEB mixer; thermal fluctuation noise; TFN |
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A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band). |
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RPLAB @ gujma @ |
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760 |
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