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Author Stevens, Martin J.; Baek, Burm; Dauler, Eric A.; Kerman, Andrew J.; Molnar, Richard J.; Hamilton, Scott A.; Berggren, Karl K.; Mirin, Richard P.; Nam, Sae Woo openurl 
  Title High-order temporal coherences of
chaotic and laser light Type Journal Article
  Year 2010 Publication Optics Express Abbreviated Journal Opt. Express  
  Volume 18 Issue (down) 2 Pages 1430-1437  
  Keywords SNSPD  
  Abstract We demonstrate a new approach to measuring high-order temporal coherences that uses a four-element superconducting nanowire single-photon detector. The four independent, interleaved single-photon-sensitive elements parse a single spatial mode of an optical beam over dimensions smaller than the minimum diffraction-limited spot size. Integrating this device with four-channel time-tagging electronics to generate multi-start, multi-stop histograms enables measurement of temporal coherences up to fourth order for a continuous range of all associated time delays. We observe high-order photon bunching from a chaotic, pseudo-thermal light source, measuring maximum third- and fourth-order coherence values of 5.87 ± 0.17 and 23.1 ± 1.8, respectively, in agreement with the theoretically predicted values of 3! = 6 and 4! = 24. Laser light, by contrast, is confirmed to have coherence values of approximately 1 for second, third and fourth orders at all time delays.  
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  Notes SSPD Approved no  
  Call Number RPLAB @ gujma @ Serial 685  
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio openurl 
  Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue (down) 2 Pages 3  
  Keywords Annealing  
  Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.  
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  Area Expedition Conference  
  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 691  
Permanent link to this record
 

 
Author Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min openurl 
  Title Rapid thermal annealing of ZnO thin films grown at room temperature Type Journal Article
  Year 2010 Publication J. Vac. Sci. Technol. A Abbreviated Journal  
  Volume 28 Issue (down) 2 Pages 4  
  Keywords Annealing  
  Abstract The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.  
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  Area Expedition Conference  
  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 692  
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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. openurl 
  Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue (down) 15 Pages 3  
  Keywords SSPD  
  Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 681  
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Author Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. url  doi
openurl 
  Title Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm Type Journal Article
  Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue (down) 13 Pages 131907 (1 to 3)  
  Keywords SSPD, SNSPD, InAsP/InP quantum dots  
  Abstract By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1238  
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