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Author Корнеева, Ю. П.; Трифонов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В.; Корнеев, А. А.; Рябчун, С. А.; Третьяков, И. В.; Гольцман, Г. Н.
Title Расчет согласующего оптического резонатора для сверхпроводникового нанополоскового детектора Type Journal Article
Year 2012 Publication Преподаватель ХХI век Abbreviated Journal
Volume Issue (up) 3 Pages 225-227
Keywords SSPD, SNSPD
Abstract В статье произведен расчет резонатора, предназначенного для согласования сверхпроводникового нанополоскового однофотонного детектора с оптическим сигналом. Показано, что для детектора, выполненного из пленки с типичным сопротивлением квадрата 500 Ом и коэффициентом заполнения 0.5 коэффициент согласования с излучением, поляризованным параллельно полоскам детектора, достигает величины около 60%.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1823
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.
Volume 7 Issue (up) 3 Pages 2000872
Keywords SWCNT transistors
Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2199-160X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1843
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Author de Lara, D. Perez; Ejrnaes, M.; Casaburi, A.; Lisitskiy, M.; Cristiano, R.; Pagano, S.; Gaggero, A.; Leoni, R.; Golt’sman, G.; Voronov, B.
Title Feasibility investigation of NbN nanowires as detector in time-of-flight mass spectrometers for macromolecules of interest in biology (proteins) Type Journal Article
Year 2008 Publication J. Low Temp. Phys. Abbreviated Journal J. Low Temp. Phys.
Volume 151 Issue (up) 3-4 Pages 771-776
Keywords NbN SSPD, SNSPD, nanowires
Abstract We are investigating the possibility of using NbN nanowires as detectors in time-of-flight mass spectrometers for investigation of macromolecules of interest in biology (proteins). NbN nanowires could overcome the two major drawbacks encountered so far by cryogenic detectors, namely the low working temperature in the mK region and the slow temporal response. In fact, NbN nanowires can work at 5 K and the response time is at least a factor 10–100 better than that of other cryogenic detectors. We present a feasibility study based on a numerical code to calculate the response of a NbN nanowire. The parameter space is investigated at different energies from IR to macromolecules (i.e. from eV to keV) in order to understand if larger value of film thickness and width can be used for the keV energy region. We also present preliminary experimental results of irradiation with X-ray photons of NbN to simulate the effect of macromolecules of the same energy.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2291 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1410
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Author Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G.
Title Three-dimensional polymer wire bonds on a chip: morphology and functionality Type Journal Article
Year 2020 Publication J. Phys. D: Appl. Phys. Abbreviated Journal J. Phys. D: Appl. Phys.
Volume 53 Issue (up) 35 Pages 355102
Keywords photonic wire bonds, PWB
Abstract Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1181
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Author Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman
Title Hot-electron effect in superconductors and its applications for radiation sensors Type Journal Article
Year 2002 Publication Superconductor Science and Technology Abbreviated Journal Supercond. Sci. Technol.
Volume 15 Issue (up) 4 Pages R1-R16
Keywords HEB, SSPD
Abstract The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 416
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Author Korneev, Alexander; Vachtomin, Yury; Minaeva, Olga; Divochiy, Alexander; Smirnov, Konstantin; Okunev, Oleg; Gol'tsman, Gregory; Zinoni, C.; Chauvin, Nicolas; Balet, Laurent; Marsili, Francesco; Bitauld, David; Alloing, Blandine; Li, Lianhe; Fiore, Andrea; Lunghi, L.; Gerardino, Annamaria; Halder, Matthäus; Jorel, Corentin; Zbinden, Hugo
Title Single-photon detection system for quantum optics applications Type Journal Article
Year 2007 Publication IEEE J. Select. Topics Quantum Electron. Abbreviated Journal IEEE J. Select. Topics Quantum Electron.
Volume 13 Issue (up) 4 Pages 944-951
Keywords SSPD, SNSPD
Abstract We describe the design and characterization of a fiber-coupled double-channel single-photon detection system based on superconducting single-photon detectors (SSPD), and its application for quantum optics experiments on semiconductor nanostructures. When operated at 2-K temperature, the system shows 10% quantum efficiency at 1.3-¿m wavelength with dark count rate below 10 counts per second and timing resolution <100 ps. The short recovery time and absence of afterpulsing leads to counting frequencies as high as 40 MHz. Moreover, the low dark count rate allows operation in continuous mode (without gating). These characteristics are very attractive-as compared to InGaAs avalanche photodiodes-for quantum optics experiments at telecommunication wavelengths. We demonstrate the use of the system in time-correlated fluorescence spectroscopy of quantum wells and in the measurement of the intensity correlation function of light emitted by semiconductor quantum dots at 1300 nm.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1077-260X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 430
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Author Semenov, A.; Goltsman, G.; Korneev, A.
Title Quantum detection by current carrying superconducting film Type Journal Article
Year 2001 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 351 Issue (up) 4 Pages 349-356
Keywords quantum detection, phase slip centers, quasiparticle diffusion
Abstract We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 507
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Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E.
Title Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation Type Journal Article
Year 2000 Publication IEEE Trans. Microw. Theory Techn. Abbreviated Journal IEEE Trans. Microw. Theory Techn.
Volume 48 Issue (up) 4 Pages 683-689
Keywords NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range
Abstract In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO&ap;1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9480 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 573
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Author Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G.
Title Superconducting NbN terahertz detectors and infrared photon counters Type Journal Article
Year 2010 Publication Вестник НГУ. Серия: физ. Abbreviated Journal Вестник НГУ. Серия: физ.
Volume 5 Issue (up) 4 Pages 68-72
Keywords HEB; HEB mixer
Abstract We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1818-7994 ISBN Medium
Area Expedition Conference
Notes УДК 538.9 Approved no
Call Number RPLAB @ gujma @ Serial 708
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Author Reiger, E.; Pan, D.; Slysz, W.; Jukna, A.; Sobolewski, R.; Dorenbos, S.; Zwiller, V.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Minaeva, O.; Gol'tsman, G.; Kitaygorsky, J.
Title Spectroscopy with nanostructured superconducting single photon detectors Type Journal Article
Year 2007 Publication IEEE J. Select. Topics Quantum Electron. Abbreviated Journal IEEE J. Select. Topics Quantum Electron.
Volume 13 Issue (up) 4 Pages 934-943
Keywords SSPD, SNSPD
Abstract Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6 mu m). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1077-260X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1424
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