Cherednichenko, S., Drakinskiy, V., Baubert, J., Krieg, J. - M., Voronov, B., Gol'tsman, G., et al. (2007). Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J. Appl. Phys., 101(12), 124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Tret’yakov, I. V., Ryabchun, S. A., Kaurova, N. S., Larionov, P. A., Lobastova, A. A., Voronov, B. M., et al. (2010). Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech. Phys. Lett., 36(12), 1103–1105.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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Чулкова, Г. М., Семёнов, А. В., Дивочий, А. В., & Тархов, М. А. (2011). Сверхпроводниковый однофотонный детектор с разрешением числа фотонов для систем дальней телекоммуникационной связи. Ж. радиоэлектрон., (12), 1–6.
Abstract: Рассмотрена возможность применения сверхпроводникового однофотонного детектора, разрешающего число фотонов, в качестве датчика приёмных модулей телекоммуникационных линий. Показано, что для достижения доли ошибочных битов на уровне 10-11 достаточно на два порядка меньшей мощности в оптическом импульсе, чем при использовании существующих приёмных модулей.
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Tretyakov, I. V., Anfertyev, V. A., Revin, L. S., Kaurova, N. S., Voronov, B. M., Vaks, V. L., et al. (2018). Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator. Radiophys. Quant. Electron., 60(12), 988–992.
Abstract: We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth.
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Tikhonov, V. V., Polyakova, O. N., Gol’tsman, G. N., Dzardanov, A. L., & Boyarskiy, D. A. (2008). Determination of dielectric properties of ore minerals in the microwave band. Radiophys. Quant. Electron., 51(12), 966–974.
Abstract: We consider a method for determining the complex dielectric permittivity of ore and nonmetal minerals in the microwave band of electromagnetic radiation. The results of measuring the reflectivity and transmittivity of chalcopyrite, magnetite, sphalerite, and labradorite samples in the frequency range 77–300 GHz are presented. A method for calculation of the complex dielectric permittivity of minerals on the basis of the obtained experimental data is proposed. The approximation formulas for calculation of the complex dielectric permittivity of the studied minerals are given.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Gerecht, E., Musante, C. F., Zhuang, Y., Yngvesson, K. S., Gol’tsman, G. N., Voronov, B. M., et al. (1999). NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers. IEEE Trans. Appl. Supercond., 47(12), 2519–2527.
Abstract: New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Kawamura, J., Blundell, R., Tong, C. -yu E., Gol’tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths. Appl. Phys. Lett., 70(12), 1619–1621.
Abstract: Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.
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Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'Tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time. Phys. Rev. B Condens. Matter., 53(12), R7592–R7595.
Abstract: We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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Gershenzon, E. M., Gol'tsman, G. N., Dzardanov, A. L., Elant'ev, A. I., Zorin, M. A., Markin, A. G., et al. (1992). S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(12), 2386–2402.
Abstract: A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol’tsman, G. N., & Elant’ev, A. I. (1978). Effect of a strong magnetic field on the spectrum of donors in InSb. Sov. Phys. Semicond., 11(12), 1395–1397.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsyna, N. G. (1977). Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett., 25(12), 539–543.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol'tsman, G. N., & Elant'ev, A. I. (1977). Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov, 11(12), 2373–2375.
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Банная, В. Ф., Веселова, Л. И., Гершензон, Е. М., Гусинский, Э. Н., & Литвак-Горская, Л. Б. (1990). Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла. Физика и техника полупроводников, 24(12), 2145–2150.
Abstract: На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая.
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Eletskii, A. V., Sarychev, A. K., Boginskaya, I. A., Bocharov, G. S., Gaiduchenko, I. A., Egin, M. S., et al. (2018). Amplification of a Raman scattering signal by carbon nanotubes. Dokl. Phys., 63(12), 496–498.
Abstract: The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
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