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Gayduchenko, I. A., Fedorov, G. E., Moskotin, M. V., Yagodkin, D. I., Seliverstov, S. V., Goltsman, G. N., et al. (2018). Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices. Nanotechnol., 29(24), 245204 (1 to 8).
Abstract: We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
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Il’in, K. S., Ptitsina, N. G., Sergeev, A. V., Gol’tsman, G. N., Gershenzon, E. M., Karasik, B. S., et al. (1998). Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys. Rev. B, 57(24), 15623–15628.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Hu, X., Zhong, T., White, J. E., Dauler, E. A. N., Faraz, Herder, C. H., Wong, F. N. C., et al. (2009). Fiber-coupled nanowire photon counter at 1550 nm with 24% system detection efficiency. Opt. Lett., 34(23), 3607–3609.
Abstract: We developed a fiber-coupled superconducting nanowire single-photon detector system in a close-cycled cryocooler and achieved 24% and 22% system detection efficiencies at wavelengths of 1550 and 1315 nm, respectively. The maximum dark count rate was ~1000 counts/s.
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Третьяков, И. В., Рябчун, С. А., Каурова, Н. С., Ларионов, П. А., Лобастова, А. А., Воронов, Б. М., et al. (2010). Оптимальная поглощенная мощность гетеродина для терагерцового сверхпроводникового NbN смесителя на электронном разогреве. Письма в ЖТФ, 36(23), 78–84.
Abstract: Представлены результаты измерений поглощенной мощности гетеродина малошумящим широкополосным смесителем на эффекте электронного разогрева в резистивном состоянии сверхпроводниковой ультратонкой пленки NbN. Оптимальная поглощенная мощность гетеродина составила около 100 nW на частоте 2.5 THz.
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Peruzzo, A., Laing, A., Politi, A., Rudolph, T., & O'Brien, J. L. (2011). Multimode quantum interference of photons in multiport integrated devices. Nat. Comm., 2(224), 6.
Abstract: Photonics is a leading approach in realizing future quantum technologies and recently, optical waveguide circuits on silicon chips have demonstrated high levels of miniaturization and performance. Multimode interference (MMI) devices promise a straightforward implementation of compact and robust multiport circuits. Here, we show quantum interference in a 2×2 MMI coupler with visibility of V=95.6+/-0.9%. We further demonstrate the operation of a 4×4 port MMI device with photon pairs, which exhibits complex quantum interference behaviour. We have developed a new technique to fully characterize such multiport devices, which removes the need for phase-sensitive measurements and may find applications for a wide range of photonic devices. Our results show that MMI devices can operate in the quantum regime with high fidelity and promise substantial simplification and concatenation of photonic quantum circuits.
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