| Records |
| Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
| Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
| Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
| Volume |
16 |
Issue  |
8 |
Pages |
1346 |
| Keywords |
Ge HEB detectors |
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| Publisher |
Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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no |
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Serial |
1741 |
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| Author |
Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
| Title |
Picosecond response of a superconducting hot-electron NbN photodetector |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
| Volume |
6 |
Issue |
7-9 |
Pages |
423-428 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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Edition |
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| ISSN |
0964-1807 |
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no |
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Serial |
1584 |
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| Author |
Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Семенов, А. Д.; Сергеев, А. В. |
| Title |
Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
Type |
Journal Article |
| Year |
1982 |
Publication |
Письма в ЖЭТФ |
Abbreviated Journal |
Письма в ЖЭТФ |
| Volume |
36 |
Issue |
7 |
Pages |
241-244 |
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| Language |
russian |
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| Notes |
Duplicated as 1717 |
Approved |
no |
| Call Number |
MSPU @ s @ |
Serial |
225 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
| Title |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
Type |
Journal Article |
| Year |
1988 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
| Volume |
14 |
Issue |
7 |
Pages |
414-420 |
| Keywords |
HEB |
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| Notes |
Duplicated as 1697 |
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no |
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Serial |
236 |
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| Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
| Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
| Keywords |
NbN HEB |
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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no |
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Serial |
252 |
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| Author |
Elant'ev, A. I.; Karasik, B. S. |
| Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
Type |
Journal Article |
| Year |
1989 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
| Volume |
15 |
Issue |
7 |
Pages |
379-383 |
| Keywords |
Nb HEB |
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no |
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Serial |
882 |
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| Author |
Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э. |
| Title |
Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности |
Type |
Journal Article |
| Year |
1988 |
Publication |
Физика низких температур |
Abbreviated Journal |
Физика низких температур |
| Volume |
14 |
Issue |
7 |
Pages |
753-763 |
| Keywords |
HEB |
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| Notes |
Duplicated as 1697 |
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no |
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Serial |
883 |
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| Author |
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
| Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
| Volume |
57 |
Issue |
7 |
Pages |
971-974 |
| Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
| Abstract |
We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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| ISSN |
1063-7842 |
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no |
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Serial |
1378 |
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| Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
| Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
| Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
| Volume |
80 |
Issue |
7 |
Pages |
435 |
| Keywords |
SSPD, quantum efficiency |
| Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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Edition |
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| ISSN |
1070-9762 |
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no |
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Serial |
1172 |
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| Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
| Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
Type |
Journal Article |
| Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
32 |
Issue |
7 |
Pages |
075003 |
| Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
| Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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| Call Number |
Antipov_2019 |
Serial |
1277 |
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