| Records |
| Author |
Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
| Title |
Fabrication of nanostructured superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
13 |
Issue  |
2 |
Pages |
192-195 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1558-2515 |
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1515 |
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| Author |
Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
| Title |
Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
3338-3341 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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| ISSN |
1051-8223 |
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1566 |
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Słysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Böhi, P.; Pearlman, A.J.; Cross, A.S.; Pan, D.; Kitaygorsky, J.; Komissarov, I.; Verevkin, A.; Milostnaya, I.; Korneev, A.; Minayeva, O.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol’tsman, G.N.; Sobolewski, R. |
| Title |
Fibre-coupled, single photon detector based on NbN superconducting nanostructures for quantum communications |
Type |
Journal Article |
| Year |
2007 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
| Volume |
54 |
Issue |
2-3 |
Pages |
315-326 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a novel, two-channel, single photon receiver based on two fibre-coupled, NbN, superconducting, single photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders and are known for ultrafast and efficient detection of visible-to-infrared photons. Coupling between the NbN detector and optical fibre was achieved using a micromechanical photoresist ring placed directly over the SSPD, holding the fibre in place. With this arrangement, we obtained coupling efficiencies up to ∼30%. Our experimental results showed that the best receiver had a near-infrared system quantum efficiency of 0.33% at 4.2 K. The quantum efficiency increased exponentially with the photon energy increase, reaching a few percent level for visible-light photons. The photoresponse pulses of our devices were limited by the meander high kinetic inductance and had the rise and fall times of approximately 250 ps and 5 ns, respectively. The receiver's timing jitter was in the 37 to 58 ps range, approximately 2 to 3 times larger than in our older free-space-coupled SSPDs. We stipulate that this timing jitter is in part due to optical fibre properties. Besides quantum communications, the two-detector arrangement should also find applications in quantum correlation experiments. |
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| ISSN |
0950-0340 |
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1434 |
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| Author |
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
| Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
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Journal Article |
| Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
| Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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no |
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1511 |
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| Author |
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
| Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 |
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no |
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1579 |
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