Author |
Title |
Year |
Publication |
Volume |
Pages |
Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
2018 |
Nanotechnol. |
29 |
245204 (1 to 8) |
Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. |
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime |
2020 |
J. Appl. Phys. |
128 |
224303 (1 to 11) |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Picosecond response on optical-range emission in thin YBaCuO films |
1991 |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
17 |
6-10 |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Wide-band highspeed Nb and YBaCuO detectors |
1991 |
IEEE Trans. Magn. |
27 |
2836-2839 |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
2011 |
Semicond. Sci. Technol. |
26 |
025013 |