Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., Aksaev, E. E., & Gershenzon, E. M. (1993). Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films. IEEE Trans. Appl. Supercond., 3(1), 2132–2135.
Abstract: The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around Tc. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1976). Investigation of free excitons in Ge and their condensation at submillimeter wavelengths. Sov. Phys. JETP, 43(1), 116–122.
Abstract: Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Goltsman, G. (1972). Simple method for stabilizing power of submillimetric spectrometer. Pribory i Tekhnika Eksperimenta, (1), 136.
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Mel’nikov, A. P., Gurvich, Y. A., Shestakov, L. N., & Gershenzon, E. M. (2001). Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett., 73(1), 44–47.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Гальперин, Ю. М., Гершензон, Е. М., Дричко, И. Л., & Литвак-Горская, Л. Б. (1990). Кинетические явления в компенсированном n-InSb при низких температурах. Физика и техника полупроводников, 24(1), 3–24.
Abstract: Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb.
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Гершензон, Е. М., Литвак-Горская, Л. Б., Луговая, Г. Я., & Шапиро, Е. З. (1986). Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩. Физика и техника полупроводников, 20(1), 99–103.
Abstract: В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.
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Pentin, I., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2020). Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation. Sci. Rep., 10(1), 16819.
Abstract: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
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Gershenzon, E. M., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristic of fast superconducting bolometers. Sov. Phys.-Tech. Phys., 34, 195–199.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Gershenson, M. E., Gong, D., Sato, T., Karasik, B. S., & Sergeev, A. V. (2001). Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett., 79, 2049–2051.
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Tretyakov, I., Ryabchun, S., Finkel, M., Maslennikova, A., Kaurova, N., Lobastova, A., et al. (2011). Low noise and wide bandwidth of NbN hot-electron bolometer mixers. Appl. Phys. Lett., 98, 033507 (1 to 3).
Abstract: We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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Tikhonov, V. V., Boyarskii, D. A., Polyakova, O. N., Dzardanov, A. L., & Goltsman, G. N. (2010). Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range. PIER B, 25, 349–367.
Abstract: The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite.
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Pernice, W., Schuck, C., Li, M., Goltsman, G. N., Sergienko, A. V., & Tang, H. X. (2011). High speed travelling wave single-photon detectors with near-unity quantum efficiency. arXiv, , 1–14.
Abstract: Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics.
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Семенов, А. В., Девятов, И. А., Рябчун, С. А., Масленников, С. Н., Масленникова, А. С., Ларионов, П. А., et al. (2011). Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций. Ж. Радиоэлектрон., 10, 7.
Abstract: A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.
В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта.
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Семенов, А. В., Девятов, И. А., Третьяков, И. В., Лобанов, Ю. В., Ожегов, Р. В., Петренко, Д. В., et al. (2011). Вывод уравнения типа уравнения гинзбурга-ландау для нанопроволоки вблизи критического магнитного поля. Ж. радиоэлектроники, 11, 4.
Abstract: Nonlinear Ginzburg-Landau equation for dirty supercondicting 1D wire is derived in the limit of high magnetic field.
В пределе больших магнитных полей выведено нелинейное уравнение Гинзбурга-Ландау, описывающее состояние одномерной «грязной» нанопроволоки.
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Гольцман, Г. Н., Разумовская, И. В., Окунев, О. В., Чулкова, Г. М., Корнеев, А. А., Финкель, М. И., et al. (2011). Сборник программ учебных дисциплин профессионального цикла подготовки магистров и бакалавров по направлению «Физика». Прометей, , 67.
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