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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
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Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
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2017 |
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IEEE Trans. Terahertz Sci. Technol. |
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IEEE Trans. Terahertz Sci. Technol. |
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7 |
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1 |
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53-59 |
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NbN HEB mixer |
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In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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1330 |
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Mehdi, I.; Gol'tsman, G.; Putz, P. |
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Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) |
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Miscellaneous |
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2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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1 |
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14-15 |
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THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.
In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).
You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml
Yours sincerely |
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Wild, W.; Kardashev, N. S.; Likhachev, S. F.; Babakin, N. G.; Arkhipov, V. Y.; Vinogradov, I. S.; Andreyanov, V. V.; Fedorchuk, S. D.; Myshonkova, N. V.; Alexsandrov, Y. A.; Novokov, I. D.; Goltsman, G. N.; Cherepaschuk, A. M.; Shustov, B. M.; Vystavkin, A. N.; Koshelets, V. P.; Vdovin, V.F.; de Graauw, T.; Helmich, F.; vd Tak, F.; Shipman, R.; Baryshev, A.; Gao, J. R.; Khosropanah, P.; Roelfsema, P.; Barthel, P.; Spaans, M.; Mendez, M.; Klapwijk, T.; Israel, F.; Hogerheijde, M.; vd Werf, P.; Cernicharo, J.; Martin-Pintado, J.; Planesas, P.; Gallego, J. D.; Beaudin, G.; Krieg, J. M.; Gerin, M.; Pagani, L.; Saraceno, P.; Di Giorgio, A. M.; Cerulli, R.; Orfei, R.; Spinoglio, L.; Piazzo, L.; Liseau, R.; Belitsky, V.; Cherednichenko, S.; Poglitsch, A.; Raab, W.; Guesten, R.; Klein, B.; Stutzki, J.; Honingh, N.; Benz, A.; Murphy, A.; Trappe, N.; Räisänen, A. |
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Millimetron—a large Russian-European submillimeter space observatory |
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Journal Article |
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2009 |
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Exp. Astron. |
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Exp. Astron. |
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23 |
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1 |
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221-244 |
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Millimetron space observatory, VLBI, very long baseline interferometry |
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Millimetron is a Russian-led 12 m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation for launch around 2017. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space very long baseline interferometry (VLBI) system. As single-dish, angular resolutions on the order of 3 to 12 arc sec will be achieved and spectral resolutions of up to a million employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines (beyond 300,000 km) resulting in micro-arc second angular resolution. |
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0922-6435 |
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1402 |
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Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
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Title |
Properties of terahertz superconducting hot electron bolometer mixers |
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Journal Article |
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2008 |
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Int. J. Terahertz Sci. Technol. |
Abbreviated Journal |
Int. J. Terahertz Sci. Technol. |
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1 |
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1 |
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37-41 |
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NbN HEB mixers, noise temperature |
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A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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1417 |
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Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E. |
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Terahertz-frequency waveguide NbN hot-electron bolometer mixer |
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Journal Article |
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2001 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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11 |
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1 |
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952-954 |
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NbN HEB mixers |
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We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz. |
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1558-2515 |
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1546 |
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Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
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Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
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Journal Article |
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2001 |
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Infrared Physics & Technology |
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Infrared Physics & Technology |
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42 |
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1 |
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41-47 |
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NbN HEB mixers, anti-reflection coating |
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Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
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1350-4495 |
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1548 |
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Semenov, A. D.; Gol’tsman, G. N. |
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Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
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2000 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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87 |
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1 |
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502-510 |
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NbN HEB mixers, nonthermal |
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We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies. |
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0021-8979 |
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1558 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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2000 |
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JETP Lett. |
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JETP Lett. |
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71 |
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1 |
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31-34 |
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2DEG, GaAs/AlGaAs heterostructures |
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The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. |
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Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation |
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1995 |
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J. Supercond. |
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J. Supercond. |
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8 |
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11-15 |
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YBCO HTS HEB |
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Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences. |
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1630 |
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Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses |
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1993 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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3 |
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1 |
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2160-2162 |
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YBCO HTS detectors |
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The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment. |
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