Records |
Author |
Масленников, Сергей Николаевич |
Title |
Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
Type |
Manuscript |
Year |
2007 |
Publication |
М. МПГУ |
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Pages |
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Keywords |
HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
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Thesis |
Ph.D. thesis |
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Russian |
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481 |
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Author |
Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
Type |
Conference Article |
Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
276-285 |
Keywords |
NbTiN HEB mixer |
Abstract |
We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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no |
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1500 |
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Author |
Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
Title |
Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
Volume |
9 |
Issue |
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Pages |
154-159 |
Keywords |
NbN HEB mixers |
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International Institute of Informatics and Systemics |
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no |
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547 |
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Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. |
Title |
Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors |
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Conference Article |
Year |
2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
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Pages |
CThM8 |
Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors |
Abstract |
We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1517 |
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Author |
Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
6275 |
Issue |
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Pages |
62750I (1 to 11) |
Keywords |
HEB, mixer, membrane |
Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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