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Гершензон, Е. М., Гольцман, Г. Н., Елантьев, А. И., Карасик, Б. С., & Потоскуев, С. Э. (1988). Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности. Физика низких температур, 14(7), 753–763.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Ozhegov, R. V., Gol’tsman, G. N., Vaks, V. L., et al. (2012). Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers. Tech. Phys., 57(7), 971–974.
Abstract: We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature.
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Elezov, M. S., Semenov, A. V., An, P. P., Tarkhov, M. A., Goltsman, G. N., Kardakova, A. I., et al. (2013). Investigating the detection regimes of a superconducting single-photon detector. J. Opt. Technol., 80(7), 435.
Abstract: The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Kaurova, N., Rudzinski, M., et al. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond. Sci. Technol., 32(7), 075003.
Abstract: We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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