| Home | << 1 2 3 4 5 6 7 8 9 10 >> [11–20] |
|
| Records | |||||
|---|---|---|---|---|---|
| Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
| Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue  |
6 | Pages | 1154-1159 |
| Keywords | Ge, excited states, admixtures | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1723 | |||
| Permanent link to this record | |||||
| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. | ||||
| Title | Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue |
6 | Pages | 1231-1234 |
| Keywords | spectrum, semiconductors, admixtures, strong magnetic-field | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | blagosklonskaya1978effect | Serial | 1724 | ||
| Permanent link to this record | |||||
| Author | Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. | ||||
| Title | Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | 1 | Issue |
5 | Pages | 587-590 |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. | ||||
| Address | Hangzhou, China | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1931-7360 | ISBN | Medium | ||
| Area | Expedition | Conference | Progress In Electromagnetics Research Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1482 | |||
| Permanent link to this record | |||||
| Author | Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. | ||||
| Title | Hot-electron superconducting mixers for 20-500 GHz operation | Type | Conference Article | ||
| Year | 1994 | Publication | Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. | Abbreviated Journal | |
| Volume | 2250 | Issue |
4D | Pages | 276-278 |
| Keywords | |||||
| Abstract | Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ phisix @ | Serial | 981 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||