Records |
Author |
Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
Title |
Electron-phonon interaction in disordered NbN films |
Type |
Journal Article |
Year |
1994 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
Volume |
194-196 |
Issue |
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Pages |
1355-1356 |
Keywords |
NbN films |
Abstract |
Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Author |
Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
Title |
Developing of NbN films for superconducting microstrip single-photon detector |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
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Pages |
012116 (1 to 5) |
Keywords |
NbN SSPD, SNSPD, NbN films |
Abstract |
We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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ISSN |
1742-6588 |
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1786 |
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Author |
Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. |
Title |
Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках |
Type |
Book Whole |
Year |
2015 |
Publication |
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Issue |
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Pages |
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Keywords |
NbN films |
Abstract |
Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. |
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Москва |
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МПГУ |
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978-5-4263-0269-3 |
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УДК: 535; Число страниц: 108 |
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no |
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Serial |
1812 |
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Author |
Смирнов, Константин Владимирович |
Title |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
Type |
Manuscript |
Year |
2000 |
Publication |
М. МПГУ |
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Issue |
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Pages |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures, NbN films |
Abstract |
Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
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Москва, МПГУ |
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Ph.D. thesis |
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1830 |
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Author |
Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
Title |
Increase of reproducibility in production of superconducting thin films of niobium nitride |
Type |
Journal Article |
Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Volume |
5 |
Issue |
10 |
Pages |
1950-1954 |
Keywords |
NbN films |
Abstract |
Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value. |
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0131-5366 |
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no |
Call Number |
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Serial |
1675 |
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