Baeva, E. M., Sidorova, M. V., Korneev, A. A., Smirnov, K. V., Divochy, A. V., Morozov, P. V., et al. (2018). Thermal properties of NbN single-photon detectors. Phys. Rev. Applied, 10(6), 064063 (1 to 8).
Abstract: We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Finkel, M., Thierschmann, H., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2017). Performance of THz components based on microstrip PECVD SiNx technology. IEEE Trans. THz Sci. Technol., 7(6), 765–771.
Abstract: We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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Gao, J. R., Hajenius, M., Tichelaar, F. D., Klapwijk, T. M., Voronov, B., Grishin, E., et al. (2007). Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate. Appl. Phys. Lett., 91(6), 062504 (1 to 3).
Abstract: The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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Kooi, J. W., Baselmans, J. J. A., Baryshev, A., Schieder, R., Hajenius, M., Gao, J. R., et al. (2006). Stability of heterodyne terahertz receivers. J. Appl. Phys., 100(6), 064904 (1 to 9).
Abstract: In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz. Supercond. Sci. Technol., 17(5), S224–S228.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
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