Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science, 361-362, 569–573.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
|
Sergeev, A., Karasik, B. S., Ptitsina, N. G., Chulkova, G. M., Il'in, K. S., & Gershenzon, E. M. (1999). Electron–phonon interaction in disordered conductors. Phys. Rev. B Condens. Matter, 263-264, 190–192.
Abstract: The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
|
|
Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1976). Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 10, 1379–1383.
|
|
Bondarenko, O. I., Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1972). Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 6, 362–363.
|
Smirnov, K. V., Ptitsina, N. G., Vakhtomin, Y. B., Verevkin, A. A., Gol’tsman, G. N., & Gershenzon, E. M. (2000). Energy relaxation of two-dimensional electrons in the quantum Hall effect regime. JETP Lett., 71(1), 31–34.
Abstract: The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
|
