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| Author | Gurevich, A. Vl.; Mints, R. G. | ||||
| Title | Self-heating in normal metals and superconductors | Type | Journal Article | ||
| Year | 1987 | Publication | Rev. Mod. Phys. | Abbreviated Journal | |
| Volume | 59 | Issue  |
4 | Pages | 941-1000 |
| Keywords | HEB, Joule self-heating effect | ||||
| Abstract | This review is devoted to the physics of current-carrying superconductors and normal metals having two or more stable states sustained by Joule self-heating. The creation, propagation, and localization of electrothermal domains and switching waves leading to the transition from one stable state to another in uniform and nonuniform samples are treated in detail. The connection between thermal bistability and hysteresis, dropping and stepped current-voltage characteristics, self-induced oscillations of current and voltage, selfreplication of electrothermal domains, and the formation of periodic and stochastic resistive structures are considered. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 917 | |||
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| Author | Смирнов, Константин Владимирович; Вахтомин, Юрий Борисович; Смирнов, Андрей Владимирович; Ожегов, Роман Викторович; Пентин, Иван Викторович; Дивочий, Александр Валерьевич; Сливинская, Елизавета Вячеславовна; Гольцман, Григорий Наумович | ||||
| Title | Приемники терагерцового и инфракрасного диапазонов, основанные на тонкопленочных сверхпроводниковых наноструктурах | Type | Journal Article | ||
| Year | 2010 | Publication | Вестник НГУ. Серия: Физика | Abbreviated Journal | Вестник НГУ. Серия: Физика |
| Volume | 5 | Issue |
4 | Pages | |
| Keywords | HEB, SSPD, SNSPD | ||||
| Abstract | В работе представлены результаты разработки и создания чувствительных и ультрабыстрых приемников, основанных на тонкопленочных сверхпроводниковых наноструктурах: болометрах на эффекте электронного разогрева (HEB – hot-electron bolometer) и детекторах одиночных фотонов видимого и инфракрасного диапазонов волн (SSPD – superconducting singe-photon detector). Представлены основные принципы работы сверхпроводниковых устройств, технология создания и конструкционные особенности приемников, их основные типы и характеристики. Достигнутые рекордные значения параметров приемных систем позволяют использовать созданные приборы при решении различных научно-исследовательских задач в ближнем, среднем и дальнем ИК диапазонах волн. This work presents the results of the development and fabrication of sensitive and ultrafast detectorsbased on thin film superconducting nanostructures: hot-electron bolometers (HEBs) and visible and infrared superconducting singe photon detectors (SSPDs). The main operational principles of the superconducting devices are presentedas well as the technology of fabrication of the detectors and their main types and parameters. The achieved record parameters of the detectors allow application of the fabricated devices to solution of various research problems in the near, middle and far IR ranges. |
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| Publisher | Новосибирский государственный университет | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Физика | Abbreviated Series Title | ||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1818-7994 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК 538.9 | Approved | no | ||
| Call Number | RPLAB @ sasha @ смирнов2010приемники | Serial | 1033 | ||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||
| Author | Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. | ||||
| Title | Input bandwidth of hot electron bolometer with spiral antenna | Type | Journal Article | ||
| Year | 2012 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 2 | Issue |
4 | Pages | 400-405 |
| Keywords | NbN HEB bolometers bandwidth, log-spiral antenna | ||||
| Abstract | We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2156-342X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1161 | |||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 1-5 |
| Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
| Permanent link to this record | |||||