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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1978 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 11 Issue (up) 12 Pages 1395-1397
Keywords InSb, spectrum of donors, strong magnetic field
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Notes Approved no
Call Number Serial 1725
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov
Volume 11 Issue (up) 12 Pages 2373-2375
Keywords InSb, energy spectrum, donors, high magnetic field
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Language Russian Summary Language Original Title
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Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no
Call Number Serial 1729
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Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
Year 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 49 Issue (up) 13 Pages 9091-9096
Keywords YBCO films
Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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ISSN 0163-1829 ISBN Medium
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Notes PMID:10009690 Approved no
Call Number Serial 1648
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume 15 Issue (up) 14 Pages 88-93
Keywords HTS HEB
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN 0320-0116 ISBN Medium
Area Expedition Conference
Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no
Call Number Serial 1693
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue (up) 16 Pages 10089-10096
Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1766
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