Abstract: We report on low noise terahertz mixers(1.4–1.9THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5to2.5THz, with 30GHz resolution) and also by measuring the mixernoise temperature at a limited number of discrete frequencies. The lowest mixernoise temperature recorded was 750K [double sideband (DSB)] at 1.6THz and 950KDSB at 1.9THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4–4.8GHz, the mixernoise temperature was 1100KDSB at 1.6THz and 1450KDSB at 1.9THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200–500nW range.

Abstract: The thesis reports the development of Hot Electron Bolometer (HEB) mixers for radio astronomy heterodyne receivers in THz frequency range. Part of this work is the fabrication of HEB devices, which are based on NbN or NbTiN superconducting thin films (â‰<a4>5 nm). They are integrated with wideband spiral or double-slot planar antennas. The mixer chips are incorporated into a quasi-optical receiver. The experimental part of this work focuses on the characterization of the receiver as a whole, and the HEB mixers as a part. Double side band receiver noise temperature and the IF bandwidth are reported for frequencies from 0.7 THz up to 2.6 THz. The spectrum of the direct response of HEB integrated with dierent antennas are measured using Fourier Transform Spectrometer (FTS). The effect of the bolometer size on total receiver performance and the LO power requirements is also discussed. A high-yield and reliable process for fabrication of NbN HEB mixers have been achieved. Over 100 devices with different bolometer geometry, film property and also different antennas have been fabricated and measured. The measured data enables us to discuss the impact of different parameters to the receiver overall performance.
This work has provided NbN HEB mixers to the following receivers:
TREND (Terahertz REceiver with NbN HEB Device) operating at 1.25-1.5 THz, installed in AST/RO Submillimeter Wave Telescope, Amundsen/Scott South Pole Station, in 2002-2003.
Band 6-low (1.410-1.700 THz) and 6-high (1.700-1.920 THz) of the HIFI (Heterodyne Instrument for Far Infra-red) in the Herschel Space Observatory, due to launch in 2007 by ESA (European Space Agency).
Besides, there has been continuous efforts to develop better models to explain the mixer performance more accurately. They are based on two temperature model for electrons and phonons and solving one-dimensional heat balance equations along the bolometer. The principles of these models are illustrated and the calculated results are compared with measured data.

Abstract: Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter.

Abstract: In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.

Abstract: In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.