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Author Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
Title Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors Type Journal Article
Year 1983 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 17 Issue (down) 8 Pages 908-913
Keywords BWO spectroscopy, pure semiconductors, residual impurities
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Notes Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках Approved no
Call Number Serial 1714
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue (down) 8 Pages 1346
Keywords Ge HEB detectors
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Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
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Notes Approved no
Call Number Serial 1741
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Author Grotz, Bernhard; Hauf, Moritz V.; Dankerl, Markus; Naydenov, Boris; Pezzagna, Sébastien; Meijer, Jan; Jelezko, Fedor; Wrachtrup, Jörg; Stutzmann, Martin; Reinhard, Friedemann; Garrido, Jose A.
Title Charge state manipulation of qubits in diamond Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal Nat. Comm.
Volume 3 Issue (down) 729 Pages 6
Keywords fromIPMRAS
Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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Call Number RPLAB @ gujma @ Serial 770
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Author Li, Mo; Pernice, W. H. P.; Xiong, C.; Baehr-Jones, T.; Hochberg, M.; Tang, H. X.
Title Harnessing optical forces in integrated photonic circuits Type Journal Article
Year 2008 Publication Nature Abbreviated Journal Nature
Volume 456 Issue (down) 7221 Pages 480-484
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ISSN 0028-0836 ISBN Medium
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Notes Approved no
Call Number RPLAB @ s @ Serial 425
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Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N.
Title Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
Year 1998 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.
Volume 6 Issue (down) 7-9 Pages 423-428
Keywords NbN SSPD, SNSPD
Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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ISSN 0964-1807 ISBN Medium
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Notes Approved no
Call Number Serial 1584
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