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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue (down) 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue (down) 2 Pages 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
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  Notes Approved no  
  Call Number Serial 1768  
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Author Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. url  doi
openurl 
  Title Picosecond hot-electron energy relaxation in NbN superconducting photodetectors Type Journal Article
  Year 2000 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 76 Issue (down) 19 Pages 2752-2754  
  Keywords NbN HEB detectors, two-temperature model, IF bandwidth  
  Abstract We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.  
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  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 856  
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 56 Issue (down) 16 Pages 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
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  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1766  
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
  Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki  
  Volume 15 Issue (down) 14 Pages 88-93  
  Keywords HTS HEB  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0320-0116 ISBN Medium  
  Area Expedition Conference  
  Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no  
  Call Number Serial 1693  
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