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Jiang, L.; Li, J.; Zhang, W.; Yao, Q. J.; Lin, Z. L.; Shi, S. C.; Vachtomin, Y. B.; Antipov, S. V.; Svechnikov, S. I.; Voronov, B. M.; Goltsman, G. N. |
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Title |
Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator |
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Year |
2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
15 |
Issue  |
2 |
Pages |
511-513 |
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Keywords |
NbN HEB mixers |
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Abstract |
It is quite beneficial to operate superconducting hot-electron-bolometer (HEB) mixers with a close-cycled 4 Kelvin refrigerator for real applications such as astronomy and atmospheric research. In this paper, a phononcooled NbN HEB mixer (quasioptical type) is thoroughly characterized under such a cooling circumstance. The effects of mechanical vibration, electrical interference, and temperature fluctuation of a two-stage Gifford-McMahon 4 Kelvin refrigerator upon the characteristics of the phononcooled NbN HEB mixer are investigated in particular. Detailed measurement results are presented. |
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1558-2515 |
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1469 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Limiting characteristics of fast-response superconducting bolometers |
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Journal Article |
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1989 |
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Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Zhurnal Tekhnicheskoi Fiziki |
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59 |
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2 |
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11-120 |
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HEB |
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Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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1696 |
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Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. |
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Title |
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime |
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Journal Article |
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2020 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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128 |
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22 |
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224303 (1 to 11) |
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HEB, resonant tunneling diode, RTD |
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The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. |
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0021-8979 |
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1262 |
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Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Picosecond response on optical-range emission in thin YBaCuO films |
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1991 |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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17 |
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22 |
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6-10 |
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YBCO HTS detectors |
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Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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1684 |
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Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
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Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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2018 |
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Nanotechnol. |
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Nanotechnol. |
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29 |
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24 |
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245204 (1 to 8) |
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single layer graphene, graphene nanoribbons |
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We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
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Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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1308 |
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