Author |
Title |
Year |
Publication |
Volume |
Pages |
Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
1994 |
Phys. Rev. B Condens. Matter. |
49 |
9091-9096 |
Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers |
1999 |
IEEE Trans. Appl. Supercond. |
47 |
2519-2527 |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
2386-2402 |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
Effect of a strong magnetic field on the spectrum of donors in InSb |
1978 |
Sov. Phys. Semicond. |
11 |
1395-1397 |