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Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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Journal Article |
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Year |
2006 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
100 |
Issue |
8 |
Pages |
084510 (1 to 7) |
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Keywords |
NbN HEB mixers |
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Abstract |
We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K
load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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0021-8979 |
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1442 |
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Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. |
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Title |
Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer |
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Journal Article |
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Year |
2006 |
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J. Appl. Phys. |
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100 |
Issue |
7 |
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074507 |
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Keywords |
HEB |
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0021-8979 |
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RPLAB @ s @ |
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385 |
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Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. |
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Title |
Critical pair-breaking current in superconducting aluminum strips far below Tc |
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Journal Article |
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1982 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
26 |
Issue |
7 |
Pages |
3648-3655 |
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Keywords |
superconducting nanowire |
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Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity. |
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Recommended by Klapwijk |
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925 |
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Author |
Klapwijk, T. M.; Semenov, A. V. |
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Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
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2017 |
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IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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Volume |
7 |
Issue |
6 |
Pages |
627-648 |
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Keywords |
HEB mixers |
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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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2016 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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93 |
Issue |
6 |
Pages |
064506 |
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Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Author |
Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
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Title |
Thermal properties of NbN single-photon detectors |
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Journal Article |
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Year |
2018 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
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Keywords |
NbN SSPD, SNSPD |
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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Author |
Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Performance of THz components based on microstrip PECVD SiNx technology |
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Journal Article |
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2017 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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Volume |
7 |
Issue |
6 |
Pages |
765-771 |
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transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
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We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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1294 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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6 |
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062504 (1 to 3) |
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NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Stability of heterodyne terahertz receivers |
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Journal Article |
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Year |
2006 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
100 |
Issue |
6 |
Pages |
064904 (1 to 9) |
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Keywords |
NbN HEB mixers |
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Abstract |
In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies. |
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0021-8979 |
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1444 |
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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title |
Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz |
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2004 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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17 |
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5 |
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S224-S228 |
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NbN HEB mixers |
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NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. |
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0953-2048 |
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