Records |
Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. |
Title |
Picosecond response of YBaCuO films to electromagnetic radiation |
Type |
Conference Article |
Year |
1990 |
Publication |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
Abbreviated Journal |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
Volume |
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Issue |
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Pages |
457-462 |
Keywords |
YBCO HTS detectors |
Abstract |
Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized. |
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Editor |
Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H. |
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Conference |
European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989 |
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Call Number |
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Serial |
1695 |
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Author |
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
Title |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
Type |
Journal Article |
Year |
2015 |
Publication |
Carbon |
Abbreviated Journal |
Carbon |
Volume |
87 |
Issue |
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Pages |
330-337 |
Keywords |
carbon nanotubes, CNT detectors, field effect transistors, FET |
Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
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ISSN |
0008-6223 |
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Serial |
1778 |
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Author |
Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. |
Title |
Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе |
Type |
Book Whole |
Year |
2012 |
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Pages |
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Keywords |
2DEG, AlGaAs/GaAs, NbN detectors |
Abstract |
Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. |
Address |
Москва |
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Publisher |
Прометей, МПГУ |
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ISBN |
978-5-4263-0118-4 |
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Notes |
УДК: 537.311 |
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Call Number |
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Serial |
1818 |
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