Records |
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
43 |
Issue |
1 |
Pages |
116-122 |
Keywords |
Ge, free excitons |
Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Author |
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Title |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
Type |
Conference Article |
Year |
1986 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume |
50 |
Issue |
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Pages |
280-281 |
Keywords |
Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect |
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Russian |
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0367-6755 |
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3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 |
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1708 |
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Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
Type |
Conference Article |
Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
Volume |
384-3 |
Issue |
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Pages |
107-116 |
Keywords |
2DEG, AlGaAs/GaAs |
Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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no |
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Serial |
1536 |
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Author |
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon scattering rate in impure NbC films |
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Abstract |
Year |
1998 |
Publication |
NASA/ADS |
Abbreviated Journal |
NASA/ADS |
Volume |
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Pages |
Y35.08 |
Keywords |
NbC films |
Abstract |
The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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no |
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Serial |
1591 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
Type |
Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Issue |
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Pages |
55-58 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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