Records |
Author |
Elant'ev, A. I.; Karasik, B. S. |
Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
Volume |
15 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
7 |
Pages |
379-383 |
Keywords |
Nb HEB |
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Serial |
882 |
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Author |
Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э. |
Title |
Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности |
Type |
Journal Article |
Year |
1988 |
Publication |
Физика низких температур |
Abbreviated Journal |
Физика низких температур |
Volume |
14 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
7 |
Pages |
753-763 |
Keywords |
HEB |
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Notes |
Duplicated as 1697 |
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no |
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Serial |
883 |
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Author |
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
Volume |
57 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
7 |
Pages |
971-974 |
Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
Abstract |
We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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no |
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Serial |
1378 |
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Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
Volume |
80 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
7 |
Pages |
435 |
Keywords |
SSPD, quantum efficiency |
Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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1070-9762 |
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no |
Call Number |
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Serial |
1172 |
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Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
Type |
Journal Article |
Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
32 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
7 |
Pages |
075003 |
Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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no |
Call Number |
Antipov_2019 |
Serial |
1277 |
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