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Author |
Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
Title |
On-Chip Single Plasmon Detection |
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Journal Article |
Year |
2010 |
Publication |
Nano Letters |
Abbreviated Journal |
Nano Lett. |
Volume |
10 |
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Pages |
661-664 |
Keywords |
optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
Abstract |
Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
Title |
Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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Journal Article |
Year |
2001 |
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Appl. Phys. Lett. |
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79 |
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Pages |
2049-2051 |
Keywords |
HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L. |
Title |
Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz |
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Journal Article |
Year |
2001 |
Publication |
Applied Physics B: Lasers and Optics |
Abbreviated Journal |
Appl. Phys. B: Lasers and Optics |
Volume |
72 |
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567-573 |
Keywords |
HgCdTe detector |
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462 |
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Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. |
Title |
Progress in far-infrared detection technology |
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Conference Article |
Year |
2002 |
Publication |
Proc. SPIE |
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Volume |
4795 |
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Pages |
121-128 |
Keywords |
HgCdTe/CdTe, detector |
Abstract |
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. |
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Longshore, R. E.; Sivananthan, S. |
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Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series |
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471 |
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InSb detectors technical data sheet |
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Miscellaneous |
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2003 |
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InSb, detector |
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476 |
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