| Records |
| Author |
Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M. |
| Title |
Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer |
Type |
Journal Article |
| Year |
1996 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
69 |
Issue  |
2 |
Pages |
260-262 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. |
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0003-6951 |
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no |
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1610 |
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| Author |
Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
| Title |
Hot electron quasioptical NbN superconducting mixer |
Type |
Journal Article |
| Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
| Keywords |
NbN HEB mixers |
| Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Superconducting single photon detectors made by local oxidation with an atomic force microscope |
Type |
Journal Article |
| Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
90 |
Issue |
19 |
Pages |
191116 (1 t0 3) |
| Keywords |
SSPD |
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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423 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
| Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
| Year |
2015 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
118 |
Issue |
19 |
Pages |
194303 |
| Keywords |
terahertz detectors, asymmetric carbon nanotubes, CNT |
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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no |
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1169 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
| Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
Type |
Journal Article |
| Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
| Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
| Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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