Korneev, A., Lipatov, A., Okunev, O., Chulkova, G., Smirnov, K., Gol’tsman, G., et al. (2003). GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering, 69(2-4), 274–278.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Marsili, F., Bitauld, D., Fiore, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2009). Superconducting parallel nanowire detector with photon number resolving functionality. J. Modern Opt., 56(2-3), 334–344.
Abstract: We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
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Słysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Górska, M., Zwiller, V., et al. (2007). Fibre-coupled, single photon detector based on NbN superconducting nanostructures for quantum communications. J. Modern Opt., 54(2-3), 315–326.
Abstract: We present a novel, two-channel, single photon receiver based on two fibre-coupled, NbN, superconducting, single photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders and are known for ultrafast and efficient detection of visible-to-infrared photons. Coupling between the NbN detector and optical fibre was achieved using a micromechanical photoresist ring placed directly over the SSPD, holding the fibre in place. With this arrangement, we obtained coupling efficiencies up to ∼30%. Our experimental results showed that the best receiver had a near-infrared system quantum efficiency of 0.33% at 4.2 K. The quantum efficiency increased exponentially with the photon energy increase, reaching a few percent level for visible-light photons. The photoresponse pulses of our devices were limited by the meander high kinetic inductance and had the rise and fall times of approximately 250 ps and 5 ns, respectively. The receiver's timing jitter was in the 37 to 58 ps range, approximately 2 to 3 times larger than in our older free-space-coupled SSPDs. We stipulate that this timing jitter is in part due to optical fibre properties. Besides quantum communications, the two-detector arrangement should also find applications in quantum correlation experiments.
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Rosfjord, K. M., Yang, J. K. W., Dauler, E. A., Kerman, A. J., Vikas Anant, Voronov, B. M., et al. (2006). Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating. Opt. Express, 14(2), 527–534.
Abstract: We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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