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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M.
Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 79 Issue 15 Pages 2483-2485
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Call Number Serial 311
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Author Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M.
Title Low noise superconducting single photon detectors on silicon Type Journal Article
Year 2008 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 93 Issue 13 Pages 131101
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Call Number RPLAB @ s @ Serial 436
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Author Mason, Whitney; Waterman, J. R.
Title Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors Type Journal Article
Year 1999 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 74 Issue 11 Pages 1633-1635
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Call Number RPLAB @ s @ Serial 461
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Author Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E.
Title Energy resolution of terahertz single-photon-sensitive bolometric detectors Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 8 Pages 083505 - 083505-3
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Abstract We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise.
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Call Number RPLAB @ akorneev @ Serial 601
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Author Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R.
Title Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 4 Pages 3
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Abstract Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Call Number RPLAB @ gujma @ Serial 697
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Author Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N.
Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 101 Issue Pages 242603
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Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.
Address TES, current distribution
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Call Number Serial 930
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Author Gousev, Yu. P.; Semenov, A. D.; Pechen, E. V.; Varlashkin, A. V.; Nebosis, R. S.; Renk K. F
Title Coupling of terahertz radiation to a high-Т(с) superconducting hot electron bolometer mixer Type Journal Article
Year 1996 Publication Abbreviated Journal Appl. Phys. Lett.,
Volume 69 Issue Pages 691-693
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Abstract We report on efficient coupling of THz radiation to a high-T(c) superconducting hot electron bolometer that is suitable for heterodyne detection. Our quasioptical system consisted of a planar self-complementary spiral antenna on a dielectric substrate clamped to an extended hyperhemispherical lens. The antenna was integrated into a co-planar line for broadband intermediate frequency matching. Measurements in the homodyne regime at a frequency of 2.5 THz showed a radiation pattern with a beam width of 1° and a coupling efficiency of 0.1. We measured, at an intermediate frequency of 1.5 GHz, an output noise temperature of'160 K and estimated for the device, operated in the heterodyne regime, a system noise temperature of 30 000 K. We also discuss possibilities of significant improvement of the sensitivity.
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Call Number RPLAB @ atomics90 @ Serial 958
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Author Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J.
Title Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers Type Journal Article
Year 2000 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 77 Issue Pages 1719
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Abstract We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains.
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Call Number RPLAB @ atomics90 @ Serial 971
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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K.
Title Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 86 Issue Pages 172106 - 172106-3
Keywords (up) 2DEG
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Call Number RPLAB @ akorneev @ Serial 603
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X.
Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 19 Pages 3
Keywords (up) 2DEG
Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Call Number RPLAB @ gujma @ Serial 673
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 2 Pages 3
Keywords (up) Annealing
Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Call Number RPLAB @ gujma @ Serial 691
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Author Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar
Title Single quantum dots emit single photons at a time: Antibunching experiments Type Journal Article
Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 78 Issue 17 Pages 2476
Keywords (up) antibunching, quantum dot
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Call Number Serial 502
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Author Rodriguez-Morales, F.; Zannoni, R.; Nicholson, J.; Fischetti, M.; Yngvesson, K. S.; Appenzeller, J.
Title Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube Type Journal Article
Year 2006 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 89 Issue 8 Pages 083502
Keywords (up) carbon nanotube, GHz heterodyne detector, direct detector
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Call Number Serial 565
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 18 Pages 181121 (1 to 5)
Keywords (up) carbon nanotubes, CNT, THz radiation, SiO2 substrate
Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Call Number Serial 1171
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 25 Pages 252602 (1 to 4)
Keywords (up) disordered TiN films, electron-phonon relaxation time
Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Call Number RPLAB @ kovalyuk @ Serial 941
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