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Author Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R.
Title Character of submillimeter photoconductivity in n-lnSb Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 1 Pages 121-128
Keywords (up)
Abstract A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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Call Number RPLAB @ phisix @ Serial 985
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Author Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type Journal Article
Year 1995 Publication JETP Abbreviated Journal JETP
Volume 80 Issue 5 Pages 960-964
Keywords (up)
Abstract The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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Call Number RPLAB @ phisix @ Serial 989
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Author Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Heating of quasiparticles in a superconducting film in the resistive state Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 34 Issue 5 Pages 268-271
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Call Number Serial 1716
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Author Gol’tsman, G. N.; Smirnov, K. V.
Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 74 Issue 9 Pages 474-479
Keywords (up) 2DEG, AlGaAs/GaAs heterostructures
Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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ISSN 0021-3640 ISBN Medium
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Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no
Call Number Serial 1541
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 64 Issue 5 Pages 404-409
Keywords (up) 2DEG, AlGaAs/GaAs heterostructures
Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no
Call Number Serial 1608
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 61 Issue 7 Pages 591-595
Keywords (up) 2DEG, AlGaAs/GaAs heterostructures
Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Call Number Serial 1624
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Author Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
Year 2000 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 71 Issue 1 Pages 31-34
Keywords (up) 2DEG, GaAs/AlGaAs heterostructures
Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
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Notes http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no
Call Number Serial 1559
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 40 Issue 2 Pages 311-315
Keywords (up) Ge, cyclotron resonance
Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Call Number Serial 1768
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords (up) Ge, donors, excited states
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Call Number Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords (up) Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Notes Approved no
Call Number Serial 1711
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 16 Issue 4 Pages 161-162
Keywords (up) Ge, energy spectrum, free excitons
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Call Number Serial 1736
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages 574
Keywords (up) Ge, excitons, photoconductivity
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Call Number Serial 1718
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 43 Issue 1 Pages 116-122
Keywords (up) Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Call Number Serial 1731
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title Energy spectrum of free excitons in germanium Type Journal Article
Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 18 Issue 3 Pages 93
Keywords (up) Ge, free excitons, energy spectrum
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Call Number Serial 1734
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 3 Pages 555-565
Keywords (up) Ge, GaAs, magnetic field, donors, energy spectrum
Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Notes Approved no
Call Number Serial 1728
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