Home << 1 2 3 >>
List View
 | 
Citations
 | 
Details
   web
Records
Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K.
Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012011 (1 to 5)
Keywords (down) WSi, NbN SSPD, SNSPD
Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1757-899X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1799
Permanent link to this record
 
 
Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.
Title Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012013 (1 to 6)
Keywords (down) WSi SSPD, SNSPD
Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1757-899X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1798
Permanent link to this record
 
 
Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 10 Issue 1 Pages 16819
Keywords (down) VN HEB
Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes PMID:33033360; PMCID:PMC7546726 Approved no
Call Number Serial 1797
Permanent link to this record
 
 
Author Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P.
Title THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites Type Journal Article
Year 2020 Publication Polymers (Basel) Abbreviated Journal Polymers (Basel)
Volume 12 Issue 12 Pages 3037 (1 to 14)
Keywords (down) THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS
Abstract Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.
Address Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2073-4360 ISBN Medium
Area Expedition Conference
Notes PMID:33353036; PMCID:PMC7767186 Approved no
Call Number Serial 1780
Permanent link to this record
 
 
Author Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y.
Title Superconducting microstructures with high impedance Type Journal Article
Year 2020 Publication Phys. Solid State Abbreviated Journal Phys. Solid State
Volume 62 Issue 9 Pages 1539-1542
Keywords (down) superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance
Abstract The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7834 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1789
Permanent link to this record
 
 
Author Shcherbatenko, M.; Elezov, M.; Sych, D.; Goltsman, G. N.
Title Optimal fiber optic scheme for sub-SQL quantum receiver realization Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012140
Keywords (down) sub-SQL, below quantum limit, QL, system quantum limit, SQL
Abstract Practical implementation of high-precision quantum measurements is an important problem in modern science. One of the main parts of the quantum receiver is the optical scheme. We developed and tested several optical circuits based on different types of interferometers, namely Sagnac-based scheme, Mach-Zehnder-based scheme, and Michelson-based scheme. All these schemes are assembled with optical fibers and fiber-optic components, since the fiber-optic implementation is closest to application in practical devices. Schemes were evaluated according to two main criteria: extinction and interference stability. On the basis of the obtained data, it can be concluded that the most suitable is the scheme based on the Mach-Zehnder interferometer. In continuous mode, we were able to obtain an interference extinction about 30 dB with acceptable temporal stability.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1265
Permanent link to this record
 
 
Author Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A.; Goltsman, G. N.
Title Enhance of the superconducting properties of the NbN/Au bilayer bridges Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012132 (1 to 4)
Keywords (down) SSPD, SNSPD
Abstract We experimentally demonstrate strong temperature dependence of the critical current of the superconducting 600-nm-wide and 5-μm-long bridge made of NbN/Au bilayer. The result is achieved due to the proximity effect realized between the highly disordered superconducting NbN layer and low resistive normal-metal Au layer.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1263
Permanent link to this record
 
 
Author Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A.
Title Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012195 (1 to 4)
Keywords (down) SSPD modelling, SNSPD
Abstract The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1785
Permanent link to this record
 
 
Author Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V.
Title Sub-shot-noise-limited fiber-optic quantum receiver Type Journal Article
Year 2020 Publication Phys. Rev. A Abbreviated Journal Phys. Rev. A
Volume 101 Issue 3 Pages 032306 (1 to 5)
Keywords (down) SSPD mixer, SNSPD
Abstract We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9926 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1268
Permanent link to this record
 
 
Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory
Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.
Volume Issue Pages
Keywords (down) single layer graphene, SLG, CVD, plasmons, FET
Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
Address Grenoble, France
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Graphene and 2dm Virtual Conference & Expo
Notes Approved no
Call Number Serial 1743
Permanent link to this record
 
 
Author Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G.
Title Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012135
Keywords (down) silicon nitride O-ring resonator, ORR
Abstract In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1177
Permanent link to this record
 
 
Author Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G.
Title Study of silicon nitride O-ring resonator for gas-sensing applications Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012124
Keywords (down) silicon nitride O-ring resonator, ORR
Abstract In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1176
Permanent link to this record
 
 
Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012156
Keywords (down) Shottky diode, THz, direct detector, multipixel camera
Abstract In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1153
Permanent link to this record
 
 
Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G.
Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012154
Keywords (down) Schottky diode, GaAs, InP substrate
Abstract In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1152
Permanent link to this record
 
 
Author Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G.
Title Three-dimensional polymer wire bonds on a chip: morphology and functionality Type Journal Article
Year 2020 Publication J. Phys. D: Appl. Phys. Abbreviated Journal J. Phys. D: Appl. Phys.
Volume 53 Issue 35 Pages 355102
Keywords (down) photonic wire bonds, PWB
Abstract Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1181
Permanent link to this record