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Author Title Year Publication Volume Pages
Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. Hot-electron superconducting mixers for 20-500 GHz operation 1994 Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. 2250 276-278
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. Character of submillimeter photoconductivity in n-lnSb 1979 Sov. Phys. JETP 49 121-128
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films 1995 JETP 80 960-964
Gershenzon, E. M.; Gol'tsman, G. N. Hot-electron superconducting mixers 1993 Proc. SPIE 2104 329-330
Gershenzon, E. M.; Gol'tsman, G. N. Effect of electromagnetic radiation on a superconductor in a magnetic field 1988 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 52 449-451
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Heating of quasiparticles in a superconducting film in the resistive state 1981 JETP Lett. 34 268-271
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions 2002 Mater. Sci. Forum 384-3 107-116
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions 1996 Surface Science 361-362 569-573
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time 1996 Phys. Rev. B Condens. Matter. 53 R7592-R7595
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films 1996 Czech J. Phys. 46 2489-2490
Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. A high resolution spectrometer for the investigation of molecular structures in the THZ range 1999 Proc. 10th Int. Symp. Space Terahertz Technol. 530-538
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. Submillimeter backward wave tube spectrometer for measuring superconducting film transmission 1983 Pribory i Tekhnika Eksperimenta 26 134-137