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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords (up) GaAs, excited donor states  
  Abstract  
  Address  
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  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. url  openurl
  Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
  Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors  
  Volume Issue Pages 631-634  
  Keywords (up) Ge, donor excited states  
  Abstract  
  Address Amsterdam  
  Corporate Author Thesis  
  Publisher North-Holland Publishing Co. Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1732  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords (up) Ge, donors, excited states  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. url  openurl
  Title Population of excited-states of small admixtures in germanium Type Conference Article
  Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya  
  Volume 42 Issue 6 Pages 1154-1159  
  Keywords (up) Ge, excited states, admixtures  
  Abstract  
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  Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1723  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords (up) Ge, impurities, excited states, absorption spectra  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1773  
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 25 Issue 12 Pages 539-543  
  Keywords (up) Ge, shallow impurities, excited states  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1726  
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Author Hartogh, P.; Jarchow, C.; Lellouch, E.; de Val-Borro, M.; Rengel, M.; Moreno, R.; Medvedev, A. S.; Sagawa, H.; Swinyard, B. M.; Cavalié, T.; Lis, D. C.; BłÄ™cka, M. I.; Banaszkiewicz, M.; Bockelée-Morvan, D.; Crovisier, J.; Encrenaz, T.; Küppers, M.; Lara, L.-M.; Szutowicz, S.; Vandenbussche, B.; Bensch, F.; Bergin, E. A.; Billebaud, F.; Biver, N.; Blake, G. A.; Blommaert, J. A. D. L.; Cernicharo, J.; Decin, L.; Encrenaz, P.; Feuchtgruber, H.; Fulton, T.; de Graauw, T.; Jehin, E.; Kidger, M.; Lorente, R.; Naylor, D. A.; Portyankina, G.; Sánchez-Portal, M.; Schieder, R.; Sidher, S.; Thomas, N.; Verdugo, E.; Waelkens, C.; Whyborn, N.; Teyssier, D.; Helmich, F.; Roelfsema, P.; Stutzki, J.; LeDuc, H. G.; Stern, J. A. doi  openurl
  Title Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2 Type Journal Article
  Year 2010 Publication Astron. Astrophys. Abbreviated Journal  
  Volume 521 Issue Pages L49  
  Keywords (up) HEB mixer applications, HIFI, Herschel, planets and satellites: atmospheres / radiative transfer / submillimeter: general / molecular processes  
  Abstract We report on an initial analysis of Herschel/HIFI observations of hydrogen chloride (HCl), hydrogen peroxide (H2O2), and molecular oxygen (O2) in the Martian atmosphere performed on 13 and 16 April 2010 (Ls ~ 77°). We derived a constant volume mixing ratio of 1400 ± 120 ppm for O2 and determined upper limits of 200 ppt for HCl and 2 ppb for H2O2. Radiative transfer model calculations indicate that the vertical profile of O2 may not be constant. Photochemical models determine the lowest values of H2O2 to be around Ls ~ 75° but overestimate the volume mixing ratio compared to our measurements.  
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  Notes Approved no  
  Call Number Serial 1093  
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Author Prober, D. E. openurl 
  Title Superconducting terahertz mixer using a transition-edge microbolometer Type Journal Article
  Year 1993 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 62 Issue 17 Pages 2119-2121  
  Keywords (up) HEB mixer, NbN, TES  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 244  
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Author Kooi, Jacob Willem pdf  isbn
openurl 
  Title Advanced receivers for submillimeter and far infrared astronomy Type Book Whole
  Year 2008 Publication University of Groningen Abbreviated Journal RUG  
  Volume Issue Pages  
  Keywords (up) HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating  
  Abstract  
  Address  
  Corporate Author Thesis Doctoral thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-90-367-3653-4 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 881  
Permanent link to this record
 
 
Author Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. openurl 
  Title Superconducting diamond films as perspective material for direct THz detectors Type Abstract
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 82  
  Keywords (up) KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP  
  Abstract Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.  
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  Notes Approved no  
  Call Number Serial 1173  
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