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Author Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee openurl 
  Title Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications Type Journal Article
  Year 1994 Publication IEEE Trans. Electron Devices Abbreviated Journal  
  Volume 41 Issue 9 Pages 1489-1497  
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  Notes Approved no  
  Call Number Serial 253  
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Author Matsushima, F.; Odashima, H.; Iwasaki, T.; Tsunekawa, S.; Takagi, K. openurl 
  Title Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz Type Conference Article
  Year 1994 Publication Conference on precision electromagnetic measurements digest Abbreviated Journal  
  Volume Issue Pages 23-24  
  Keywords (up)  
  Abstract Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared.  
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  Notes Approved no  
  Call Number Serial 487  
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Author Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. doi  openurl
  Title Hot-electron superconducting mixers for 20-500 GHz operation Type Conference Article
  Year 1994 Publication Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. Abbreviated Journal  
  Volume 2250 Issue 4D Pages 276-278  
  Keywords (up)  
  Abstract Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.  
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  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 981  
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Author Gol’tsman, G. N. url  doi
openurl 
  Title Terahertz technology in Russia Type Conference Article
  Year 1994 Publication 24th European Microwave Conf. Abbreviated Journal 24th European Microwave Conf.  
  Volume 1 Issue Pages 113-121  
  Keywords (up) BWO, HEB mixers  
  Abstract The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.  
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  Area Expedition Conference 24th European Microwave Conference  
  Notes Approved no  
  Call Number Serial 1635  
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Author Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S. url  openurl
  Title Investigation of a superconducting hot electron mixer Type Conference Article
  Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 169-188  
  Keywords (up) HEB mixers  
  Abstract Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.  
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  Notes Approved no  
  Call Number Serial 1642  
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Author Elantev, Andrey I.; Karasik, Boris S. url  openurl
  Title Noise temperature of a superconducting hot-electron mixer Type Conference Article
  Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 225  
  Keywords (up) HEB mixers  
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  Notes Approved no  
  Call Number Serial 1645  
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords (up) Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
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  Publisher American Physical Society Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 1005  
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Author Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. url  openurl
  Title Superconductive properties of ultrathin NbN films on different substrates Type Journal Article
  Year 1994 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 7 Issue 6 Pages 1097-1102  
  Keywords (up) NbN films  
  Abstract A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.  
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  Language Russian Summary Language Original Title  
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  ISSN 0131-5366 ISBN Medium  
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  Notes Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках Approved no  
  Call Number Serial 1631  
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Author Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. url  doi
openurl 
  Title Electron-phonon interaction in disordered NbN films Type Journal Article
  Year 1994 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.  
  Volume 194-196 Issue Pages 1355-1356  
  Keywords (up) NbN films  
  Abstract Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.  
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  ISSN 0921-4526 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1649  
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Author Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. doi  openurl
  Title Broadband ultrafast superconducting NbN detector for electromagnetic radiation Type Journal Article
  Year 1994 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 75 Issue 7 Pages 3695-3697  
  Keywords (up) NbN HEB  
  Abstract An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.  
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  Notes Approved no  
  Call Number Serial 252  
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