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	Author	Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.
	Title	Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system			Type	Conference Article
	Year	2017	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	132	Issue	2	Pages	2
	Keywords
	Abstract	Recently bright-light control of the SSPD has been demonstrated. This attack employed a â€œbackdoorâ€ in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains â€œlatchedâ€ in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1116
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Journal Article
	Year	2019	Publication	Phys. Status Solidi RRL	Abbreviated Journal	Phys. Status Solidi RRL
	Volume	13	Issue	9	Pages	1900187-(1-6)
	Keywords
	Abstract	For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6254	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1149
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	Author	Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N.
	Title	Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder			Type	Miscellaneous
	Year	2019	Publication	arXiv	Abbreviated Journal	arXiv
	Volume		Issue		Pages	1-10
	Keywords
	Abstract	We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1278
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	Author	Goltsman, G. N.
	Title	Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications			Type	Abstract
	Year	2006	Publication	31nd IRMW / 14th ICTE	Abbreviated Journal	31nd IRMW / 14th ICTE
	Volume		Issue		Pages	177
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics
	Notes				Approved	no
	Call Number				Serial	1443
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	Author	Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N.
	Title	Receiver measurements of pHEB beam lead mixers on 3-μm silicon			Type	Conference Article
	Year	2005	Publication	Proc. 30th IRMMW / 13th THz	Abbreviated Journal	Proc. 30th IRMMW / 13th THz
	Volume		Issue		Pages	271-272
	Keywords
	Abstract	We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics
	Notes				Approved	no
	Call Number				Serial	1460
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	Author	Goltsman, G.
	Title	Simple method for stabilizing power of submillimetric spectrometer			Type	Journal Article
	Year	1972	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume		Issue	1	Pages	136
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1738
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	Author	Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N.
	Title	A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure			Type	Journal Article
	Year	2005	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	39	Issue	9	Pages	1082-1086
	Keywords	2D electron gas, AlGaAs/GaAs heterostructures, mixers
	Abstract	Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1463
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
	Title	Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	55-58
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1602
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	Author	Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G.
	Title	Luminescence of colloidal Ag₂S/ZnS core/shell quantum dots capped with thioglycolic acid			Type	Journal Article
	Year	2020	Publication	J. Luminescence	Abbreviated Journal	J. Luminescence
	Volume	220	Issue		Pages	117008 (1 to 7)
	Keywords	Ag2S QD, quantum dots
	Abstract	The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-2313	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1267
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	Author	Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	IRMMW-THz	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	Ag2S quantum dots
	Abstract	A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-2035	ISBN	978-1-5386-8285-2	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	8874267			Serial	1286
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
	Title	Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements			Type	Journal Article
	Year	2011	Publication	Semicond. Sci. Technol.	Abbreviated Journal	Semicond. Sci. Technol.
	Volume	26	Issue	2	Pages	025013
	Keywords	AlGaAs/GaAs heterojunctions
	Abstract	We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0268-1242	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1215
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	Author	Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
	Title	Relaxation of the resistive superconducting state in boron-doped diamond films			Type	Journal Article
	Year	2016	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	93	Issue	6	Pages	064506
	Keywords	boron-doped diamond films, resistive superconducting state, relaxation time
	Abstract	We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9950	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1167
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051048
	Keywords	Bragg waveguide, Si3N4
	Abstract	We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1195
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform			Type	Conference Article
	Year	2017	Publication	Proc. SPBOPEN	Abbreviated Journal	Proc. SPBOPEN
	Volume		Issue		Pages	449-450
	Keywords	Bragg waveguides
	Abstract	We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed.
	Address	St. Petersburg, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1141			Approved	no
	Call Number				Serial	1257
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	Author	Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	CMOS compatible nanoantenna-nanodiamond integration			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012180
	Keywords	bull-eye antenna, hyperbolic metamaterials, NV-centers
	Abstract	Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1182
Permanent link to this record