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Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
van de Stadt, H. |
An improved 1 THz waveguide mixer |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
536 |
|
|
|
Belitsky, V. Yu.; Kollberg, E. L. |
Tuning circuit for NbN SIS mixer |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
234 |
|
|
|
Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
First results for a 2.5 THz Schottky diode waveguide mixer |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
494 |
|
|
|
Betz, A. L.; Borejko, R. T. |
A practical Schottky mixer for 5 THz |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
503 |
|
|
|
Carlstrom, John E.; Jonas Zmuidzinas |
Millimeter and Submillimeter Techniques |
1996 |
|
|
848 |
|
|
|
Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo |
Submm wavelenght waveguide mixers using planar Schottky barier diods |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
462 |
|
|
|
Tong, C. Y. E.; Blundell, R.; Bumble, B.; Stern, J. A.; LeDuc, H. G. |
Sub-Millimeter distributed quasiparticle receiver employing a non-Linear transmission line |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
47 |
|
|
|
Tong, C. Y. E.; Blundell, R.; Paine, S.; Papa, D. C.; Kawamura, J.; Stern, J.; LeDuc, H. G. |
Design and characterization of a 250-350 GHz fixed-tuned superconductor-insulator-insulator receiver |
1996 |
IEEE Trans. Microw. Theory Techn. |
44 |
1548-1556 |
|
|
|
Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
Receiver noise temperature, the quantum noise limit, and the role of the zero-point fluctuations |
1996 |
Electronics division internal report NO. 304 |
|
1-10 |
|
|
|
Gousev, Yu. P.; Semenov, A. D.; Pechen, E. V.; Varlashkin, A. V.; Nebosis, R. S.; Renk K. F |
Coupling of terahertz radiation to a high-Т(с) superconducting hot electron bolometer mixer |
1996 |
|
69 |
691-693 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
|
|
|
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
1996 |
Czech J. Phys. |
46 |
2489-2490 |
|
|
|
|
ГОСТ Р 50995.3.1-96. Технологическое обеспечение создания продукции. Технологическая подготовка производства |
1996 |
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