Author |
Title |
Year |
Publication |
Volume |
Pages |
Jackson, B. D.; Hesper, R.; Adema, J.; Barkhof, J.; Baryshev, A. M.; Zijlstra, T.; Zhu, S.; Klapwijk, T. M. |
Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
7-11 |
Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob |
ALMA band 5 (163-211 GHz) sideband separation mixer |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
19-23 |
Uzawa, Y.; Kojima, T.; Kroug, M.; Takeda, M.; Candotti, M.; Fujii, Y.; Shan, W.-L.; Kaneko, K.; Shitov, S.; Wang, M.-J. |
Development of the 787-950 GHz ALMA band 10 cartridge |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
12-12 |
Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
Broadband SIS mixer for 1 THz Band |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
35-35 |
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
2009 |
J. Commun. Technol. Electron. |
54 |
716-720 |
Dieleman, Piter |
Fundamental limitations of THz niobium and niobiumnitride SIS mixers |
1998 |
|
|
|
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
1999 |
IEEE Trans. Appl. Supercond. |
9 |
3216-3219 |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
1986 |
Физика и техника полупроводников |
20 |
99-103 |
Kooi, Jacob Willem |
Advanced receivers for submillimeter and far infrared astronomy |
2008 |
University of Groningen |
|
|
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
2018 |
Materials Today: Proc. |
5 |
27301-27306 |