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Author Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type Conference Article
Year 1996 Publication Czech. J. Phys. Abbreviated Journal Czech. J. Phys.
Volume 46 Issue S2 Pages 857-858
Keywords (down) NbC films
Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1617
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Author Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B.
Title Thickness dependence of superconducting properties of ultrathin Nb and NbN films Type Conference Article
Year 2004 Publication AKF-Frühjahrstagung Abbreviated Journal
Volume Issue Pages
Keywords (down) Nb, NbN films, has potential plagiarism
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Address Berlin-Adlershof
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Notes Approved no
Call Number Serial 1503
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Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 390-397
Keywords (down) HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Notes Approved no
Call Number Serial 1576
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Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
Year 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal
Volume 2 Issue Pages 972-977
Keywords (down) HEB mixer, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
Address Jerusalem, Israel
Corporate Author Thesis
Publisher IEEE Place of Publication Editor
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ISSN ISBN Medium
Area Expedition Conference 27th Eur. Microwave Conf.
Notes Approved no
Call Number Serial 1075
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Author Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 16 Pages 2285-2287
Keywords (down) HEB mixer, diffusion cooling channel, diffusion channel
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ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 262
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