Records |
Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
Keywords |
Ge, impurities, excited states, absorption spectra |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1773 |
Permanent link to this record |
|
|
|
Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
Type |
Journal Article |
Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
Volume |
22 |
Issue |
3 |
Pages |
540-543 |
Keywords |
Ge, free holes, capture |
Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
Russian |
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
Approved |
no |
Call Number |
|
Serial |
1698 |
Permanent link to this record |
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
18 |
Issue |
3 |
Pages |
93 |
Keywords |
Ge, free excitons, energy spectrum |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1734 |
Permanent link to this record |
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
43 |
Issue |
1 |
Pages |
116-122 |
Keywords |
Ge, free excitons |
Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1731 |
Permanent link to this record |
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
33 |
Issue |
11 |
Pages |
574 |
Keywords |
Ge, excitons, photoconductivity |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1718 |
Permanent link to this record |