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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio openurl 
  Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue 2 Pages 3  
  Keywords (up) Annealing  
  Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.  
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  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 691  
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Author Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar url  doi
openurl 
  Title Single quantum dots emit single photons at a time: Antibunching experiments Type Journal Article
  Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 78 Issue 17 Pages 2476  
  Keywords (up) antibunching, quantum dot  
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 502  
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Author Rodriguez-Morales, F.; Zannoni, R.; Nicholson, J.; Fischetti, M.; Yngvesson, K. S.; Appenzeller, J. url  doi
openurl 
  Title Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube Type Journal Article
  Year 2006 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 89 Issue 8 Pages 083502  
  Keywords (up) carbon nanotube, GHz heterodyne detector, direct detector  
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  Notes Approved no  
  Call Number Serial 565  
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. url  doi
openurl 
  Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue 18 Pages 181121 (1 to 5)  
  Keywords (up) carbon nanotubes, CNT, THz radiation, SiO2 substrate  
  Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.  
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  Notes Approved no  
  Call Number Serial 1171  
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. doi  openurl
  Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue 25 Pages 252602 (1 to 4)  
  Keywords (up) disordered TiN films, electron-phonon relaxation time  
  Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.		  
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  Call Number RPLAB @ kovalyuk @ Serial 941  
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. url  doi
openurl 
  Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
  Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 112 Issue 14 Pages 141101 (1 to 5)  
  Keywords (up) graphene field effect transistors, FET  
  Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.		  
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  Notes Approved no  
  Call Number Serial 1309  
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Author Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. url  doi
openurl 
  Title Resistive transition of niobium superconducting hot-electron bolometer mixers Type Journal Article
  Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2826  
  Keywords (up) HEB  
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  Notes Approved no  
  Call Number Serial 543  
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Author Karasik, B. S.; Elantiev, A. I. url  doi
openurl 
  Title Noise temperature limit of a superconducting hot-electron bolometer mixer Type Journal Article
  Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 68 Issue 6 Pages 853-855  
  Keywords (up) HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth  
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  Notes Approved no  
  Call Number Serial 260  
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Author Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. openurl 
  Title Current-induced vortex unbinding in bolometer mixers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 87 Issue Pages 263506 (1 to 3)  
  Keywords (up) HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile  
  Abstract We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.  
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  Notes Approved no  
  Call Number Serial 604  
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Author Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. url  doi
openurl 
  Title Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer Type Journal Article
  Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 68 Issue 16 Pages 2285-2287  
  Keywords (up) HEB mixer, diffusion cooling channel, diffusion channel  
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  Notes Approved no  
  Call Number Serial 262  
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