|
Records |
Links |
|
Author |
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
Type |
Journal Article |
|
Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
|
|
Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1171 |
|
Permanent link to this record |
|
|
|
|
Author |
Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
Type |
Journal Article |
|
Year |
2015 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
|
|
Volume |
15 |
Issue |
12 |
Pages |
7859-7866 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
carbon nanotubes, CNT, tunable superconductivity, van Hove singularities |
|
|
Abstract |
Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. |
|
|
Address |
Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1530-6984 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 |
Approved |
no |
|
|
Call Number |
|
Serial |
1782 |
|
Permanent link to this record |
|
|
|
|
Author |
Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
Type |
Journal Article |
|
Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
103 |
Issue |
25 |
Pages |
252602 (1 to 4) |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
disordered TiN films, electron-phonon relaxation time |
|
|
Abstract |
We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ kovalyuk @ |
Serial |
941 |
|
Permanent link to this record |
|
|
|
|
Author |
Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer |
Type |
Journal Article |
|
Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
|
|
|
Volume |
100 |
Issue |
7 |
Pages |
074507 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ s @ |
Serial |
385 |
|
Permanent link to this record |
|
|
|
|
Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
Type |
Journal Article |
|
Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
73 |
Issue |
19 |
Pages |
2826 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
543 |
|
Permanent link to this record |
|
|
|
|
Author |
Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer |
Type |
Journal Article |
|
Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
|
Volume |
25 |
Issue |
3 |
Pages |
2300304 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB detector responsivity, HEB model, numerical calculations, numerical model |
|
|
Abstract |
We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
953 |
|
Permanent link to this record |
|
|
|
|
Author |
Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
Type |
Journal Article |
|
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
|
Volume |
15 |
Issue |
2 |
Pages |
495-498 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
|
|
Abstract |
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
980 |
|
Permanent link to this record |
|
|
|
|
Author |
Klapwijk, T. M.; Barends, R.; Gao, J. R.; Hajenius, M.; Baselmans, J. J. A. |
|
|
Title |
Improved superconducting hot-electron bolometer devices for the THz range |
Type |
Conference Article |
|
Year |
2004 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
|
|
Volume |
5498 |
Issue |
|
Pages |
129-139 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB mixer distributed model, numerical model |
|
|
Abstract |
Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Invited talk, Recommended by Klapwijk |
Approved |
no |
|
|
Call Number |
|
Serial |
912 |
|
Permanent link to this record |
|
|
|
|
Author |
Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
|
|
Title |
Current-induced vortex unbinding in bolometer mixers |
Type |
Journal Article |
|
Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
87 |
Issue |
|
Pages |
263506 (1 to 3) |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
|
|
Abstract |
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
604 |
|
Permanent link to this record |
|
|
|
|
Author |
Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
Type |
Journal Article |
|
Year |
2016 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
|
|
|
Volume |
109 |
Issue |
13 |
Pages |
132602 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
HEB mixer, contacts |
|
|
Abstract |
We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1107 |
|
Permanent link to this record |