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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Journal Article |
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Year |
1975 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
22 |
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4 |
Pages |
95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Journal Article |
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Year |
1988 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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22 |
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3 |
Pages |
540-543 |
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Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Russian |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
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Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Journal Article |
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Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
43 |
Issue |
1 |
Pages |
116-122 |
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Ge, free excitons |
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Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Journal Article |
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Year |
1981 |
Publication |
JETP Lett. |
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JETP Lett. |
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33 |
Issue |
11 |
Pages |
574 |
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Ge, excitons, photoconductivity |
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1718 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
Type |
Journal Article |
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Year |
1982 |
Publication |
Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
Issue |
4 |
Pages |
454-455 |
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Ge, exciton photoconduction |
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1715 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
16 |
Issue |
4 |
Pages |
161-162 |
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Ge, energy spectrum, free excitons |
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1736 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
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Year |
1983 |
Publication |
Sov. Phys. JETP |
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Sov. Phys. JETP |
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57 |
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2 |
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369-376 |
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Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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1972 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
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1976 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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1772 |
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