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Author Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range Type Journal Article
  Year 2003 Publication IEEE Microw. Wireless Compon. Lett. Abbreviated Journal IEEE Microw. Wireless Compon. Lett.  
  Volume 13 Issue 11 Pages 493-495  
  Keywords (down) waveguide NbN HEB mixers  
  Abstract We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1531-1309 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1509  
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Author Tong, C. E.; Blundell, R.; Papa, D. C.; Smith, M.; Kawamura, J.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. url  doi
openurl 
  Title An all solid-state superconducting heterodyne receiver at terahertz frequencies Type Journal Article
  Year 1999 Publication IEEE Microw. Guid. Wave Lett. Abbreviated Journal IEEE Microw. Guid. Wave Lett.  
  Volume 9 Issue 9 Pages 366-368  
  Keywords (down) waveguide NbN HEB mixers  
  Abstract A superconducting hot-electron bolometer mixer-receiver operating from 1 to 1.26 THz has been developed. This heterodyne receiver employs two solid-state local oscillators each consisting of a Gunn oscillator followed by two stages of varactor frequency multiplication. The measured receiver noise temperature is 1350 K at 1.035 THz and 2700 K at 1.26 THz. This receiver demonstrates that tunable solid-state local oscillators, supplying only a few micro-watts of output power, can be used in terahertz receiver applications.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8207 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1565  
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Author 0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. url  openurl
  Title NbN hot electron waveguide mixer for 100 GHz operation Type Conference Article
  Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 214-224  
  Keywords (down) waveguide NbN HEB mixers  
  Abstract NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K.  
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  Notes Approved no  
  Call Number Serial 1644  
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Author Shurakov, Alexander; Tong, Cheuk-yu E.; Blundell, Raymond; Gol’tsman, Gregory url  openurl
  Title A microwave pumped HEB direct detector using a homodyne readout scheme Type Abstract
  Year 2014 Publication Proc. 25th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 25th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 129  
  Keywords (down) waveguide NbN HEB detector, NEP  
  Abstract We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let.  
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  Notes Approved no  
  Call Number Serial 1365  
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Author Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. url  doi
openurl 
  Title Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers Type Journal Article
  Year 2012 Publication Tech. Phys. Abbreviated Journal Tech. Phys.  
  Volume 57 Issue 7 Pages 971-974  
  Keywords (down) semiconducting superlattice frequency multiplier, NbN HEB mixers  
  Abstract We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7842 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1378  
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Author Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. url  openurl
  Title Gap frequency and photon absorption in a hot electron bolometer Type Conference Article
  Year 2016 Publication Proc. 27th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 27th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 121  
  Keywords (down) NbN HEB; Si membrane  
  Abstract The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.  
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  Notes Approved no  
  Call Number Serial 1204  
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Author Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. url  doi
openurl 
  Title Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer Type Journal Article
  Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue Pages 04004 (1 to 2)  
  Keywords (down) NbN HEB, QCL  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference 3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018)  
  Notes Approved no  
  Call Number Serial 1808  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title High speed hot-electron superconducting bolometer Type Conference Article
  Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2104 Issue Pages 181-182  
  Keywords (down) NbN HEb, Nb, Al  
  Abstract Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.  
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  Publisher SPIE Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
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  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes Approved no  
  Call Number Serial 1652  
Permanent link to this record
 
 
Author Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. url  openurl
  Title Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method Type Conference Article
  Year 2016 Publication Proc. 27th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 30-32  
  Keywords (down) NbN HEB, GaN buffer layer  
  Abstract In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.  
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  Notes Approved no  
  Call Number Serial 1202  
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Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. url  doi
openurl 
  Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type Journal Article
  Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 7 Pages 075307  
  Keywords (down) NbN HEB mixers, QCL, IR  
  Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1293  
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