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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. url  doi
openurl 
  Title Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
  Year 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 66 Issue 20 Pages 205414_1-205414_5  
  Keywords (down) optical mixing  
  Abstract  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 499  
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Author Su, M. Y.; Carter, S. G.; Sherwin, M. S. url  doi
openurl 
  Title Strong-field terahertz optical mixing in excitons Type Journal Article
  Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 67 Issue 12 Pages  
  Keywords (down) optical mixing  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 500  
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Author Ciulin, V.; Carter, S. G.; Sherwin, M. S. url  doi
openurl 
  Title Terahertz optical mixing in biased GaAs single quantum wells Type Journal Article
  Year 2004 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 70 Issue 11 Pages 115312-(1-6)  
  Keywords (down) optical mixing  
  Abstract  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 501  
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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. url  doi
openurl 
  Title Electron energy relaxation in disordered superconducting NbN films Type Journal Article
  Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 102 Issue 5 Pages 054501 (1 to 15)  
  Keywords (down) NbN SSPD, SNSPD, HEB, bandwidth, relaxation time  
  Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1266  
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Author Lusche, R.; Semenov, A.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Gol'tsman, G.; Hübers, H.-W. url  doi
openurl 
  Title Effect of magnetic field on the photon detection in thin superconducting meander structures Type Journal Article
  Year 2014 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 89 Issue 10 Pages 104513 (1 to 7)  
  Keywords (down) NbN SSPD, SNSPD  
  Abstract We have studied the influence of an externally applied magnetic field on the photon and dark count rates of meander-type niobium nitride superconducting nanowire single-photon detectors. Measurements have been performed at a temperature of 4.2 K, and magnetic fields up to 250 mT have been applied perpendicularly to the meander plane. While photon count rates are field independent at weak applied fields, they show a strong dependence at fields starting from approximately ±25 mT. This behavior, as well as the magnetic field dependence of the dark count rates, is in good agreement with the recent theoretical model of vortex-assisted photon detection and spontaneous vortex crossing in narrow superconducting lines. However, the local reduction of the superconducting free energy due to photon absorption, which is the fitting parameter in the model, increases much slower with the photon energy than the model predicts. Furthermore, changes in the free-energy during photon counts and dark counts depend differently on the current that flows through the meander. This indicates that photon counts and dark counts occur in different parts of the meander.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1367  
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. url  doi
openurl 
  Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
  Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 67 Issue 13 Pages 132508 (1 to 4)  
  Keywords (down) NbN SSPD, SNSPD  
  Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1519  
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Author Peltonen, J. T.; Astafiev, O. V.; Korneeva, Y. P.; Voronov, B. M.; Korneev, A. A.; Charaev, I. M.; Semenov, A. V.; Golt'sman, G. N.; Ioffe, L. B.; Klapwijk, T. M.; Tsai, J. S. url  doi
openurl 
  Title Coherent flux tunneling through NbN nanowires Type Journal Article
  Year 2013 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 88 Issue 22 Pages 220506 (1 to 5)  
  Keywords (down) NbN nanowires  
  Abstract We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1369  
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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. url  doi
openurl 
  Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
  Year 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 57 Issue 24 Pages 15623-15628  
  Keywords (down) NbC films  
  Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1585  
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords (down) Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
  Address  
  Corporate Author Thesis  
  Publisher American Physical Society Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1005  
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Author Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. url  doi
openurl 
  Title Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields Type Journal Article
  Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 101 Issue 6 Pages 060508 (1 to 6)  
  Keywords (down) MoSi, WSi films  
  Abstract We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1800  
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