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Gershenzon, E. M., Gol'tsman, G. N., & Kagane, M. L. (1977). Energy spectrum of acceptors in germanium and its response to a magnetic field. Sov. Phys. JETP, 45(4), 769–776.
Abstract: We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1973). Submillimeter spectroscopy of semiconductors. Sov. Phys. JETP, 37(2), 299–304.
Abstract: The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Blagosklonskaya, L. E., Gershenzon, E. M., Goltsman, G. N., & Elantev, A. I. (1978). Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1231–1234). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Boyarskii, D. A., Gershenzon, V. E., Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., Tikhonov, V. V., et al. (1996). On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data. J. of Communications Technology and Electronics, 41(5), 408–414.
Abstract: A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1992). Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches. In Progress in High Temperature Superconductivity (Vol. 32, pp. 190–195).
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Mel’nikov, A. P., Gurvich, Y. A., Shestakov, L. N., & Gershenzon, E. M. (2001). Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett., 73(1), 44–47.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Sergeev, A. V., Semenov, A. D., Kouminov, P., Trifonov, V., Goghidze, I. G., Karasik, B. S., et al. (1994). Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation. Phys. Rev. B Condens. Matter., 49(13), 9091–9096.
Abstract: The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., Gol’tsman, G. N., Semenov, A. D., & Gershenzon, E. M. (1993). Thermal boundary resistance at YBaCuO film-substrate interface. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 405–406).
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Danerud, M., Winkler, D., Lindgren, M., Zorin, M., Trifonov, V., Karasik, B., et al. (1994). A fast infrared detector based on patterned YBCO thin film. Supercond. Sci. Technol., 7(5), 321–323.
Abstract: Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
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