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Lee, Ju-Hyun; Kim, Dong-Woo; Wu, Yung-Hsun; Yu, Chang-Jae; Lee, Sin-Doo; Wu, Shin-Tson |
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Title |
High-speed infrared phase modulators using short helical pitch ferroelectric liquid crystals |
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2005 |
Publication |
Optics Express |
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Opt. Express |
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13 |
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20 |
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7732 |
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IR modulator |
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1094-4087 |
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541 |
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Author |
Darula, Marian; Semenov, Alex D.; Hübers, Heinz-Wilhelm; Schubert, Josef |
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Title |
Quasioptical high-Tc superconductor Josephson mixer at terahertz frequencies |
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Year |
2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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515 |
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HTS Josephson mixers |
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Mixers based on Josephson junctions from conventional superconductor materials have demonstrated excellent performance at subgap frequencies. The advantages of Josephson mixers are low optimal power of the local oscillator and large intermediate frequency bandwidth but their noise temperature increases dramatically at frequencies corresponding to the energy gap of the superconductor, which is typically below 1 THz for widely used materials. The large energy gap of oxide superconductors makes them promising candidates for development of terahertz Josephson mixers. Here we report on experimental study of the quasioptical mixer utilizing bicrystal Josephson junction from high-transition-temperature YBa 2 Cu 3 O 7-δ film. Junctions with a width of 2 µm were fabricated from 100 nm thick laser ablated films on bicrystal MgO substrates and had the and the J C R n product of about 2 mV at 4.2 K. The planar complementary logarithmic spiral antenna incorporated into co-planar waveguide was patterned from 200 nm thick gold film thermally evaporated in situ on top of the YBa 2 Cu 3 O 7-δ film. The mixer chip was clamped to the extended hemispherical silicon lens. Performance of the mixer was investigated at 4.5 K bath temperature. We used FIR laser as a local oscillator at frequencies 0.698 and 2.52 THz. System noise temperature (DSB) was determined from Y-factor measured with 300 K and 77 K loads. At 0.698 THz the lowest noise temperature 1750 K was observed when the mixer was biased with the fixed current to the region in the vicinity of either the first Shapiro step or the critical current. Between these two bias points the noise temperature increased to ≈ 20000 K. As function of the local oscillator power the noise temperature reached the minimum when the critical current was suppressed to the half of its equilibrium value. Power of the local oscillator absorbed by the mixer at optimal operation was of the order 100 nW. The present design of our antenna limits the upper operation frequency to the value of 1.8 THz. Nevertheless, we clearly observed Shapiro steps at the frequency 2.52 THz. Bearing in mind an improved design of the antenna, we estimate the 3000 K DSB noise temperature at this frequency. |
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1555 |
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Kinch, M. A.; Wan, C.-F., Beck, J. D. |
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Title |
1/f noise in HgCdTe photodiodes |
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2005 |
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J. Electron. Mater. |
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34 |
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6 |
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928-932 |
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HgCdTe |
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468 |
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Tong, C.-Y.E.; Meledin, D.V.; Marrone, D.P.; Paine, S.N.; Gibson, H.; Blundell, R. |
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Title |
Near field vector beam measurements at 1 THz |
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2003 |
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IEEE Microw. Compon. Lett. |
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13 |
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6 |
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235-237 |
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Keywords |
HEB, mixer, waveguide, LO power, local oscillator power, saturation effect, dynamic range |
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We have performed near-field vector beam measurements at 1.03 THz to characterize and align the receiver optics of a superconducting receiver. The signal source is a harmonic generator mounted on an X-Y translation stage. We model the measured two-dimensional complex beam pattern by a fundamental Gaussian mode, from which we derive the position of the beam center, the beam radius and the direction of propagation. By performing scans in the planes separated by 400 mm, we have confirmed that our beam pattern measurements are highly reliable. |
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1531-1309 |
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RPLAB @ lobanovyury @ |
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574 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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2007 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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101 |
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12 |
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124508 (1 to 6) |
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HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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