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Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
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Title |
Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge |
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Year |
1990 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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24 |
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10 |
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1881-1883 |
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impurities, photoconductivity, Ge, capture of free carriers, magnetic field |
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Abstract |
Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. |
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1755 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
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Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
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Journal Article |
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2021 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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15 |
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5 |
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054014 |
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Keywords |
InOx, Au/Ni, NbN films |
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Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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2331-7019 |
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1769 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
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1977 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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11 |
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12 |
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2373-2375 |
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InSb, energy spectrum, donors, high magnetic field |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
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1978 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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11 |
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12 |
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1395-1397 |
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InSb, spectrum of donors, strong magnetic field |
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1725 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
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Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
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1992 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
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6 |
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1129-1140 |
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IR HEB detectors |
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Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. |
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Russian |
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0131-5366 |
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1673 |
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